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Fabrication of Diamond Films for Electronic Devices
Hiraki, Akio 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e4
Our group has developed diamond film synthesis in vapor phase by the so-called magneto-active microwave plasma chemical vapor deposition. The goal of the diamond film growth over large area at belwo $200^{\circ}C$ with high quality has been tried rather successfully. The growth rate can be enhanced by pulse modulated discrage which enables us to control radical densities in the plasma. Thermal flux to the substrate from the palsma can be reduced with decreaing the duty ratio of the discharger resulting in cooling down the substrated for the low temperature deposition. Nanocrystal seeding is Essentially and unique pretreatment for diamond nuclei to improve the film quality. Such high-density and high-quality nuclei due to the seeding with purified nanocrystalline diamond paricles can be realized netither through scratcihing norbiasing at low temperature, e.g., below $200^{\circ}C$ .
Electron Emitter of Negative Electron Affinity Diamond
Hiraki, Akio,Ogawa, Kenji,Eimori, Nobuhiro,Hatta, Akimitsu The Korean Ceramic Society 1996 The Korean journal of ceramics Vol.2 No.4
A new type of electron emitter device of chemical-vapor-deposited diamond thin film is proposed. The device is a diode of metal-insulator-insulator-semiconductor (MIS) structure consisting of an intrinsic polycrystalline diamond film as the insulator, an aluminium electrode on one side, and hydrogenated diamond surface on the other side as the p-type semconductor with negative electron affinity (NEA). Electrons will be injected and/or excited to the conduction band of intrinsic diamond layer to be emitted from the hydrogenated diamond surface of NEA.
Designing of a Carbon Nano-Structure for a High Quality Electron Emitter
H. Hiraki,Akio Hiraki,H Zhang,H.X. Wang,N Jiang 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
Carbon materials, including carbon nano-tube (CNT), diamond, and other carbon relatives, have received considerable attention as good materials for an electron emitter. One of the reasons is that diamond exhibits a very unique physical property known as NEA (negative electron affinity). Another practical reason is that our society requires FPDs (flat-panel-displays), such as LCDs (liquid-crystal-displays), PDPs (plasma-display-panels) and others, in order to replace the traditional display by CRT (cathode-ray-tube). In this respect, if a high-quality electron emitter is available, it can contribute greatly to the above requirement for FPDs. Because LCDs need a large area and bright back-light using the emitter, it is possible to produce FEDs (field-emission displays) as the SAMSUNG company does. The present author and his coworkers have long been trying to fabricate a good electron emitter from carbon nano-materials, and, at present, the emitter has shown a world-class property: a very low turn-on voltage (0.5 V/$\mu$m to induce a 10 $\mu$A/cm$^2$ emission current) to emit a 1 $\mu$A/cm$^2$ current at 1.1 V/$\mu$m and a 100 $\mu$A/cm$^2$ current at slightly lower than 4 V/$\mu$m with a gap distance of 1 mm. In this invited talk, starting from a stratagem of designing the carbon nano-structure for a good emitter on the basis of the theory of electron emission, we will give explanations on how the emitter was fabricated and on how well the emitter produces light of about 70 lm/watt with brightness of 10$^5$ cd/m$^2$(white-light) to be applied for the fabrication of mercury-free lights and white back-lights for LCDs.
Won, Jaihyung,Hatta, Akimitsu,Yagi, Hiromasa,Wang, Chunlei,Jiang, Nan,Jeon, Hyeongmin,Deguehi, Masahiro,Kitabatake, Makoto,Ito, Toshimichi,Sasaki, Takatomo,Hiraki, Akio The Korean Ceramic Society 1998 The Korean journal of ceramics Vol.4 No.1
Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.