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Comprehensive loss modeling in Cu2ZnSnS4 solar cells
Atul Kumar,Ajay D. Thakur 한국물리학회 2019 Current Applied Physics Vol.19 No.10
Thin film solar cells based on Cu2ZnSnS4 (CZTS) absorber material suffers from performance issues arising due to the presence of a non-optimal back contact barrier, low carrier lifetime, acceptor/donor point defects in bulk, interface defects at the absorber-buffer junction and grain boundaries within the absorber. We perform comprehensive simulations enumerating the impact of these performance limiting factors on CZTS solar cells. These simulations capture the experimentally observed anomalies in current-voltage (I–V) characteristics and the opencircuit voltage (VOC) pinning in CZTS solar cells. These cause-effect relationships as elaborated in the findings are expected to be of great interest to the experimentalists working in this field.
Role of an oxide interface in a resistive switch
Kumari Karuna,Kar Subhasmita,Thakur Ajay D.,Ray S.J. 한국물리학회 2022 Current Applied Physics Vol.35 No.-
In the present era of data-driven architectures like 5G, Internet of things (IoT), Artificial Intelligence (AI), etc, the requirement of fast-switchable memory storage is more than ever. Oxide resistive switches are considered to be a primary choice in the non-volatile memory design. In this work, we have engineered the conventional metal-insulator-metal (MIM) structure of an oxide memristor (Ag/ZnO/ITO) by inducing an additional oxide layer La0.7Sr0.3MnO3 (LSMO) at the interface between the active layer (ZnO) and Ag electrode. The presence of LSMO acts as a reservoir for the oxygen vacancies, easing the conducting filament formation process in ZnO, thereby enabling drastic improvement of the switching performance and offering reliable endurance over multiple switching cycles. First-principles-based calculations suggested the role of oxygen vacancies in controlling the electronic state of ZnO and formation of vacancies in the resistive switching process, which is in agreement with the experimental observation. The current results pave ways for improving the switching performance of resistive memory circuits through simple structural engineering incorporation, which lies at the heart of oxide electronics.