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- 저자 : AUSTEN K. FLATT (검색결과 1 건)
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CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS
FU-REN F. FAN,BO CHEN,AUSTEN K. FLATT,JAMES M. TOUR,ALLEN J. BARD 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2007 NANO Vol.2 No.5
We report here the current–voltage (i–V) characteristics of several (n++-Si/MNOPE/C60/Pt-tip) or (n++-Si/MNOPE/SWCNT/Pt-tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++-Si shows NDR behavior, whereas those of C60- and SWCNT-derivatized GMMs of MNOPE on n++-Si show strong rectifying behavior with opposite rectification polarities. With C60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++-Si/MNOPE/SWCNT/Pt-tip) junctions also show reversible bistable switching behavior.
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