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MBE로 성장시킨 $\textrm{In}_{0.1}\textrm{Ga}_{0.1}\textrm{As}$에피층의 Photoreflectance 특성 연구
이동율,유재인,손정식,김기홍,이동건,이정열,배인호,손영호,황도언,Lee, Dong-Yul,Yu, Jae-In,Son, Jeong-Sik,Kim, Gi-Hong,Lee, Dong-Geon,Lee, Jeong-Yeol,Bae, In-Ho,Son, Yeong-Ho,Hwang, Do-Eon 한국재료학회 1999 한국재료학회지 Vol.9 No.5
We have investigated the photoreflectance characteristics for In\ulcornerGaAs/GaAs heterojunction structure grown by molecular beam epitaxy (MBE). The E\ulcorner bandgap energy of In\ulcornerGa\ulcornerAs at room temperature was observed at about 1.3 eV. From this result, the indium composition x value was calculated. The shoulder peaks were observed higher than E\ulcorner peaks, and peak positions were shifted toward 12 meV to 70 meV higher energy with increasing doping concentrations. The shoulder peaks can be observed by In segregation and re-evaporation. However, we think that indium re-evaporation cause th shift of shoulder peaks after epilayer growth.