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Endurance Improvement due to Rapid Thermal Annealing (RTA) of a TaOx Thin Film in an Oxygen Ambient
홍정협,장우철,송효석,강준호,전형탁,전희영,박진규,김현정,김홍기 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.5
As the device size is scaled down, the physical size limit is an issue that limits conventional chargebasedmemories. Thus, many academic studies have focused on investigating alternative non-volatilememories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which hasa simple structure and can be densified with a crossbar array structure. The resistive-switchingcharacteristic of the Pt/annealed-TaOx/TiN structure was investigated in this research. Annealingat 300◦C in an oxygen ambient changed the phase of the TaOx layer from TaO2−y to Ta2O5−z. We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed byannealing, produced a reliable conducting filament in the annealed-TaOx layer and improved thedevice characteristics.