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Role of PbO-Based Glass Frit in Ag Thick-Film Contact Formation for Crystalline Si Solar Cells
홍경국,조성빈,Ji-Weon Jeong,허주열,Hyun Jung Park 대한금속·재료학회 2009 METALS AND MATERIALS International Vol.15 No.2
The reactions between Ag pastes containing two types of PbO-based glass frits and an n-type (100) Si wafer during firing in air at 800 °C were investigated in order to understand the mechanism for the formation of inverted pyramidal Ag crystallites at the Si interface as well as the effect of the PbO content of the glass frit on Ag crystallite formation. Inverted pyramidal Ag crystallites were formed by the precipitation of Ag atoms dissolved in fluidized glass during the subsequent cooling process after firing. PbO in the glass frit did not participate directly in the reaction with the Si wafer. However, its content had a strong influence on the reaction rate at the glass/Si interface and, thus, on the size and distribution of the Ag crystallites. The effect of the PbO content in the glass could be understood from the higher Ag solubility and lower viscosity of the glass at the firing temperature with increasing PbO content. Based on the experimental results, a model was proposed for the formation of Ag crystallites at the glass/Si interface during the firing process of screen-printed thick-film Ag metallization. The reactions between Ag pastes containing two types of PbO-based glass frits and an n-type (100) Si wafer during firing in air at 800 °C were investigated in order to understand the mechanism for the formation of inverted pyramidal Ag crystallites at the Si interface as well as the effect of the PbO content of the glass frit on Ag crystallite formation. Inverted pyramidal Ag crystallites were formed by the precipitation of Ag atoms dissolved in fluidized glass during the subsequent cooling process after firing. PbO in the glass frit did not participate directly in the reaction with the Si wafer. However, its content had a strong influence on the reaction rate at the glass/Si interface and, thus, on the size and distribution of the Ag crystallites. The effect of the PbO content in the glass could be understood from the higher Ag solubility and lower viscosity of the glass at the firing temperature with increasing PbO content. Based on the experimental results, a model was proposed for the formation of Ag crystallites at the glass/Si interface during the firing process of screen-printed thick-film Ag metallization.
조성빈,홍경국,허주열,Ji-Weon Jeong,Hyun Jung Park 한국물리학회 2010 Current Applied Physics Vol.10 No.2
In order to understand the mechanism of Ag crystallite formation at the paste/Si interface, the interfacial reactions between a Ag paste containing PbO-based glass frit and an n-type (100) Si wafer during firing at 800 ℃ were examined by varying the oxygen partial pressure (Po2) in the firing ambience. The formation of inverted pyramidal Ag crystallites at the glass/Si interface was attributed to the redox reaction between the Ag+ ions dissolved in the fluidized glass and the Si wafer. Without any oxygen in the firing ambience, no Ag crystallite was formed. The Po2 in the firing ambience strongly affected the size and distribution of the Ag crystallites, as well as the sintering behavior of Ag powder, via its influence on the reaction forming the Ag+ ions. The present study results demonstrated that the ambient oxygen plays a crucial role in the formation of thick-film Ag contacts for crystalline Si solar cells.