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Spectroscopic Ellipsometric Properties of Ga1-xFexAs Dilute MagneticSemiconductors
호선 이,H. T. Oh,H. Y. Cho,H. Munekata,R. Moriya,강태동,Y. J. Park 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We report pseudodielectric function data $<\!\epsilon\!>$ = $<\!\epsilon_1\!>$ + $i<\!\epsilon_2\!>$ of Ga$_{1-x}$ Fe$_x$As semiconductors grown on $GaAs$ substrates. The data were obtained from 1.5 to 6 eV using spectroscopic ellipsometry. Critical point (CP) parameters were obtained by fitting model lineshapes to numerically calculated second energy derivatives of $<\!\epsilon\!>$. The bandgap energies of $E_1$, $E_1+\Delta_1$, $E_0$', and $E_2$ were determined. We observed an increase of the $E_1$ and $E_1 + \Delta_1$ gap energy similar to that of ZnFe$_x$Se$_{1-x}$. The linewidth of CPs increased with increasing Fe compositions. The band gap energy shifts were mainly attributed to the alloying effect because the strain effect on the band gap energies was negligible. We also discuss the band gap shift in terms of an sp-d hybridization model.