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ITO 에미터 투명전극을 갖는 InGaAs/InP HPT의 연구
한교용,Han, Kyo-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.3
A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a $SiO_2$ passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD $SiO_2$ deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.
P3HT/POSS 합성 활성층을 이용한 OTFT 소자의 대기안정성 향상
박정환,한교용,Park, Jeong-Hwan,Han, Kyo-Yong 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
In order to improve air stability, we proposed a new active layer of an organic TFT by synthesizing P3HT/POSS conjugated polymer. P3HT/POSS OTFTs with the various P3HT/POSS volume ratios were fabricated and characterized. With the P3HT/POSS volume ratio of 1:1, we achieved the field-effect mobilities of ${\sim}1.19{\times}10^{-3}\;cm^2/v{\cdot}sec$ in the saturation region and the current on/off ratio of ${\sim}2.51{\times}10^2$. The resulting current on-off ratio was much higher than that of the P3HT-based OTFTs and resulted from the dramatic decrease of the off-current. Since the off-current can be reduced by preventing oxygen in atmosphere from doping the P3HT/POSS active layers, this new active layer shows its ability to avoid oxygen doping in atmosphere. Therefore, the improvement of the air stability can be achieved by employing the P3HT/POSS active layers.
포토리소그래피를 이용한 P3HT 활성층의 패터닝에 대한 연구
박경동,남동현,박정환,한교용,Park, Kyeong-Dong,Nam, Dong-Hyun,Park, Jeong-Hwan,Han, Kyo-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.4
We studied on possibility of the application of photolithography technique to patterning the organic active layer poly(3-hexylthiophene) (P3HT). In the case of selective etching method, we made thin oxide film on P3HT thin film using $O_2$ treatment. We achieved the field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}\;cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the selective etching method, ${\sim}7.4{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}5{\times}10^3$ in the lift-off one. These values are higher than ones of the unpatterned P3HT-based OTFTs. On the basis of the above results, we demonstrate the photolithographic patterning for P3HT active layer is successfully carried out without degradation of P3HT.
감광성 PVA 박막을 이용한 P3HT 유기박막트랜지스터의 패턴 형성과 패시베이션
남동현,박경동,박정환,한교용,Nam, Dong-Hyun,Park, Kyeong-Dong,Park, Jeong-Hwan,Han, Kyo-Yong 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.5
We first demonstrated simultaneous patterning and passivation of P3HT active layer with photosensitive PVA. The passivation layers were obtained by annealing the organic layers after developing PVA and subsequent over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs exhibited the mobility of ${\sim}5.9{\times}10^{-4}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^4$. After passivation, the results showed the extended lifetime of ${\sim}250$ hours with photosensitive PVA layer.