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다양한 변환 공진기에 형성되는 비등방성 속삭임의 회랑 모드
김인보,최무한,Kim, Inbo,Choi, Muhan 한국광학회 2018 한국광학회지 Vol.29 No.3
이 논문에서는 변환 광학의 기본 원리를 설명하고 이를 적용하여 공진기 모양이 원형으로부터 크게 변형되어도 속삭임의 회랑 모드(WGM)의 특성을 유지할 수 있는 다양한 변환 공진기 설계 기법을 소개한다. 특정 등각 변환 하에서 다양한 변환 공진기를 얻는 방법으로서 초기 정의역을 평행 이동시키는 방법과, 타원을 정의역으로 잡고 회전시키는 방법을 제시하였고, 이를 통해 설계된 몇 가지의 공진기 모드에 대한 내부 파형 및 원거리장 출력 특성을 수치해석적으로 계산하였다. 이러한 결과로부터, 하나의 주어진 등각 좌표변환과 관련된 다양한 GRIN 공진기가 가능하다는 것을 확인하였다. We explain the basic principle of transformation optics, and introduce several design techniques for transformation cavities that can maintain the characteristics of whispering gallery modes (WGMs) even if the cavity is strongly deformed from a circular shape. As a method of obtaining various transformation cavities under a specific conformal mapping, we suggest a method of parallel movement of the initial cavity domain, and a method of rotating the ellipse as a cavity domain. The internal wave pattern and the far-field output characteristics of several designed resonant modes are numerically calculated. From these results, it is confirmed that a variety of GRIN resonators are possible for a given conformal coordinate transformation.
균일하고 0 V에 가까운 Dirac 전압을 갖는 그래핀 전계효과 트랜지스터 제작 공정
박홍휘 ( Honghwi Park ),최무한 ( Muhan Choi ),박홍식 ( Hongsik Park ) 한국센서학회 2018 센서학회지 Vol.27 No.3
Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at 300 °C was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.