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고온 내화물 응용을 위한 질화규소철 (Ferro-Si<sub>3</sub>N<sub>4</sub>)의 분해거동
최도문,이진석,최성철,Choi, Do-Mun,Lee, Jin-Seok,Choi, Sung-Churl 한국세라믹학회 2006 한국세라믹학회지 Vol.43 No.9
Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the <III> preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.
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$Li_2O-Al_2O_3-SiO_2$계 소지의 Mullite 첨가에 의한 열적, 기계적 특성에 관한 연구
최도문,유재근,이응상 한국세라믹학회 1993 한국세라믹학회지 Vol.30 No.5
Due to the anisotropy of thermal expansion, LAS system which has low thermal expansion property is hard to obtain a dense sintered body. Therefore, the thermal expansion coefficient and the mechanical strength were decreased. In this study, mullite, which has good mechanical properties in high temperature and comparatively low thmeral expansion coefficient, was taken as a additive in LAS system. And then, sintering, thermal, and mechanical properties were investigated. The results are follows; When mullite is added in eucryptite composition (Li2O.Al2O3.2SiO2) of LAS system, the creation of liquid phase results in the densification of sintered body and the specimen sintered at 136$0^{\circ}C$ for 2 hours shows optimum sintering condition. With the addition of mullite in eucryptite composition, mechanical strength is increased by the control of grain growth. Especially, flexual strength of EM0 specimen was about double value than the basic composition. Thermal expansion coefficients of EM0 and EM15 specimens sintered at 136$0^{\circ}C$ were -8.23$\times$10-6/$^{\circ}C$ and -4.90$\times$10-6/$^{\circ}C$ in the temperature range of RT.~80$0^{\circ}C$. As the mullite content are increased, negative thermal expansion ratios are decreased.
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내화물 응용을 위한 산화물 재료들과 탄소와의 고온 반응거동
최도문,이진석,최성철,김남훈 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.6
High temperature reaction behaviors of various oxide materials (such as bauxite, pyrophyllite, mullite and fused silica powders) used in the refractory materials for tap-hole plugging of blast furnace were investigated with varying temperature in the carbon surrounding. Kinetics of carbothermal reduction of SiO2 for forming SiC with high corrosion resistance were strongly dependent on it’s crystalline phase. SiC generation yield increased with increasing catalyst amount in oxide regardless of generated SiO gas amount at temperature of <1500 o C. However, in case of fused silica over 1500 o C, SiC generation yield was dominantly influenced by SiO amount without catalyst effect. Bauxite showed the most effective carbothermal reduction reaction, since bauxite have a large amount of catalyst and well-dispersed SiO2 phase in oxide matrix.
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변윤기,한경섭,최성철,최도문 한국세라믹학회 2007 한국세라믹학회지 Vol.44 No.3
High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at 700~900oC. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.
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