http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
전자빔 조사 에너지에 따른 In2O3 박막의 특성 변화
허성보 ( Sung Bo Heo ),천주용 ( Joo Yong Chun ),이영진 ( Young Jin Lee ),이학민 ( Hak Min Lee ),김대일 ( Dae Il Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.3
We have considered the effect of electron irradiation energy of 300, 600 and 900 eV on structural, electrical and optical properties of In2O3 films prepared with RF magnetron sputtering. In this study, the thin film crystallization, optical transmittance and sheet resistance are dependent on the electron`s irradiation energy. The electron irradiated In2O3 films at 900 eV are grown as a hexagonal wurtzite phase. The sheet resistance decreases with a increase in electron irradiation energy and In2O3 film irradiated at 900 eV shows the lowest sheet resistance of 110Ω/□. The optical transmittance of In2O3 films in a visible wave length region also depends on the electron irradiation energy. The film that at 900 eV shows the higher figure of merit than another films prepared in this study.