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채희엽,Hebert H. Sawin 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.3
Plasma kinetics of silicon dioxide plasma cleaning is investigated with C2F6 and CF3CF2OCF=CF2 (perfluoroethyl vinyl ether, PEVE) in this work. Perfluorocompounds (PFCs) are widely used in the semiconductor industry, and they are known to have long atmospheric lifetimes and high global warming potentials (GWP) due to their chemical stability and large cross sections for infrared radiation absorption. The silicon dioxide (SiO2) cleaning process in a plasmaenhanced chemical vapor deposition (PECVD) chamber is known to be the largest PFC emission source for the semiconductor industry. Silicon-dioxide removal rates by surface reactions in plasmas were measured in the temperature range from room temperature to 400 C by using laser interferometry, and the fluorine density was determined by using an optical emission spectroscopy (OES) actinometry technique. The ion density and the ion energy were determined by using an impedance analysis and an equivalent circuit model. The activation energy was determined from Arrehenius plot to be 0.163 eV and 0.169 eV for C2F6 and PEVE plasmas, respectively, in the PECVD chamber cleaning condition. It is shown here that silicon-dioxide removal rate is linearly proportional to the fluorine concentration for the PECVD chamber cleaning condition of 300 . 400 C and that the removal rate depends on the ion flux and the ion energy below 100 C. The combined etch rate model is suggested to explain this temperature dependence in this work. From this plasma kinetic study, we can conclude that the atomic fluorine concentration is the dominant factor in silicon-dioxide removal for the PECVD chamber cleaning condition.
채희엽 한국공업화학회 2014 한국공업화학회 연구논문 초록집 Vol.2014 No.1
OLED조명은 면광원으로서 고품질의 조명을 제공할 수 있어 조명 및 디스플레이 산업체에서 관심을 가지고 연구를 진행하고 있으며, 최근 본격적으로 시제품이 생산되기 시작하였다. 하지만 아직은 높은 비용으로 인하여 본격적인 상용화에는 시간과 노력이 필요할 것으로 판단된다. 본 발표에서는 비용을 낮추기 위한 전략중에 하나인 Roll-to-Roll 청색 OLED 제작 공정과 색변환에 의한 백색 OLED 조명구현 전략을 소개하고자 한다. 청색 OLED의 색변환을 위하여 다양한 형광체와 양자점을 이용하여 색변환효율과 CRI를 높이는 연구결과를 소개한다.
박근주,채희엽,한인식,이희덕,김기현,이원묵 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.2
A novel Helmholtz coil inductively coupled plasma (H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about 5×1011/cm3, and the electron temperature was about 2–3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of HeO2. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.
장희규,채희엽,이학승,이한영 한국진공학회 2014 Applied Science and Convergence Technology Vol.23 No.6
In this article, plasma monitoring tools and mulivariate analysis techniques were reviewed. Optical emission spectroscopy was reviewed for a chemical composition analysis tool andRF V-I probe for a physical analysis tool for plasma monitoring. Multivariate analysistechniques are discussed to the sensitivity improvement. Principal component analysis (PCA)is one of the widely adopted multivariate analysis techniques and its application to end-pointdetection of plasma etching process is discussed.