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RISS 인기검색어
- 검색키워드
- 저자 : 중촌철랑 (中村哲郞) ( Gwiy Sang Chung (검색결과 2 건)
- 무료
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정귀상,석전성,중촌철랑,Chung, Gwiy-Sang,Ishida, Makoto,Nakamura, Tetsuro The Korean Sensors Society 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.
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정규상,석전성 (石田誠),중촌철랑 (中村哲郞) ( Gwiy Sang Chung,Makoto Ishida,Tetsuro Nakamura ) 한국센서학회 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/SiO₂/Si and Si/Al₂O₃/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to 300 . In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the 50I pressure sensors was controlled to within a standard deviation of ±2.3 % over 200 devices. Moreover, the pressure sensors fabricated on the double SOI (Si/Al₂O₃/Si/SiO₂/Si) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.
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