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ALD ZnO 버퍼층 증착 온도가 전착 Cu<sub>2</sub>O 박막 태양전지 소자 특성에 미치는 영향
조재유,트란 휴 만,허재영,Cho, Jae Yu,Tran, Man Hieu,Heo, Jaeyeong 한국태양광발전학회 2018 Current Photovoltaic Research Vol.6 No.1
Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. $Cu_2O$, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility ($100cm^2/Vs$). In spite of these various advantages, the efficiency of $Cu_2O$ based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of $Cu_2O$ solar cells can be the formation of CuO layer due to atmospheric surface oxidation of $Cu_2O$ absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on $Cu_2O$ surface. First, $Cu_2O$ absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between $80^{\circ}C$ to $140^{\circ}C$. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on $Cu_2O$ based solar cells by J-V and XPS measurements.
ALD ZnO 버퍼층 증착 온도가 전착 Cu₂O 박막 태양전지 소자 특성에 미치는 영향
조재유(Jae Yu Cho),트란 휴만(Man Hieu Tran),허재영(Jaeyeong Heo) 한국태양광발전학회 2018 Current Photovoltaic Research Vol.6 No.1
Beside several advantages, the PV power generation as a clean energy source, is still below the supply level due to high power generation cost. Therefore, the interest in fabricating low-cost thin film solar cells is increasing continuously. Cu₂O, a low cost photovoltaic material, has a wide direct band gap of ~2.1 eV has along with the high theoretical energy conversion efficiency of about 20%. On the other hand, it has other benefits such as earth-abundance, low cost, non-toxic, high carrier mobility (100 cm²/Vs). In spite of these various advantages, the efficiency of Cu₂O based solar cells is still significantly lower than the theoretical limit as reported in several literatures. One of the reasons behind the low efficiency of Cu₂O solar cells can be the formation of CuO layer due to atmospheric surface oxidation of Cu₂O absorber layer. In this work, atomic layer deposition method was used to remove the CuO layer that formed on Cu₂O surface. First, Cu₂O absorber layer was deposited by electrodeposition. On top of it buffer (ZnO) and TCO (AZO) layers were deposited by atomic layer deposition and rf-magnetron sputtering respectively. We fabricated the cells with a change in the deposition temperature of buffer layer ranging between 80°C to 140°C. Finally, we compared the performance of fabricated solar cells, and studied the influence of buffer layer deposition temperature on Cu₂O based solar cells by J-V and XPS measurements.
스퍼터링 공정 조건이 산화 구리 박막 특성에 미치는 영향
조재유(Jae Yu Cho),허재영(Jaeyeong Heo) 한국태양광발전학회 2017 Current Photovoltaic Research Vol.5 No.1
The fossil fuel power consumption generates CO₂, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, Cu₂O is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide (Cu₂O) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap (Eg = ~2.1 eV) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 ㎚. In addition, Cu₂O has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the Cu2O thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.
2차 버퍼층 ZnMgO 박막의 Mg/(Mg+Zn) 비율 조절을 통한 SnS 박막 태양전지 효율 향상
이효석,조재유,윤성민,정채환,허재영,Lee, Hyo Seok,Cho, Jae Yu,Youn, Sung-Min,Jeong, Chaehwan,Heo, Jaeyeong 한국재료학회 2020 한국재료학회지 Vol.30 No.10
In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm<sup>-2</sup>, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.