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Kwangwook Park,Sooraj Ravindran,주건우,Jung-Wook Min,Seokjin Kang,명노성,Sang-Youp Yim,조용륜,김봉중,Yong-Tak Lee 한국물리학회 2016 Current Applied Physics Vol.16 No.12
GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zincblende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.