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종덕 이,건호 김,병렬 안,용운 신,정주 이,현수 김 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.4
Iron thin films were grown directly on n-Si(111) substrates without any buffer layer by using pulsed electrodeposition in a non-aqueous solution. The electrical and the electrochemical characteristics of the Fe2+/n-Si(111) interface in the electrolyte solution were characterized by using a cyclic voltammogram (CV) and the Mott-Schottky (MS) relation. CV results indicated that the Fe2+/n-Si(111) interface showed a good diode behavior by forming a Schottky barrier. The flatband potential of the n-Si(111) substrate and the equilibrium redox potential of Fe2+ ions were − 0.526 V and − 0.316 V, respectively. The nucleation and growth kinetics at the initial stages of Fe2+/n-Si(111) interface formation studied by current transients were indicative of an instantaneous nucleation mode rather than a progressive one. According to this model, the estimated nucleus density and diffusion coefficient were on the order of magnitude of 1010cm−2 and 10−9 cm2s−1, espectively. From the as-deposited sample obtained using a potential pulse of 1.4 V and 300 Hz, Fe nuclei in early deposition stages were found to grow to three dimensional islands with an average size of about 100 nm. As the deposition time was increased, the sizes of the Fe nuclei increased progressively and by a coalescence of the nuclei, continuous Fe films were grown on the Si surfaces. In this case, the Fe films showed a highly oriented columnar tructure, and X-ray diffraction patterns reveal that the FF-Fe phase was grown on the n-Si(111) substrates.
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