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Ga<sub>2</sub>Se<sub>3</sub> 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se<sub>2</sub> 박막의 Ga 분포 변화 연구
정광선,신영민,조양휘,윤재호,안병태,Jung, Gwang-Sun,Shin, Young-Min,Cho, Yang-Hwi,Yun, Jae-Ho,Ahn, Byung-Tae 한국재료학회 2010 한국재료학회지 Vol.20 No.8
The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.
Cu(In,Ga)Se<sub>2</sub> 박막의 KF 처리가 CIGS태양전지에 미치는 영향
정광선,차은석,문선홍,안병태,Jeong, Gwang Sun,Cha, Eun Seok,Moon, Sun Hong,Ahn, Byung Tae 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.2
We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.
정광선,김승태,고영민,문선홍,최용우,안병태 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
Low-temperature fabrication of Cu(In,Ga)Se2 (CIGS) film is essential forflexible CIGS solar cells. A large-grained CIGS film was synthesized with aSe-deficient Cu/In,Ga)2Se3 stacked precursor by reacting at 500 °C in avacuum and was then subsequently annealing in Se environment. The CIGSsolar cell with the as-prepared CIGS film had a poor cell performance due toa very low Ga composition at the CIGS surface. The surface Ga compositionwas controlled to 0.2 by supplying In, Ga, and Se in a temperature range of350 to 500 °C. From an analysis of the photoluminescence spectra, we foundthat the point defects, Se vacancy and In-in-Cu antisite, in the CIGS filmwere greatly reduced by annealing below 450 °C. The short-circuit currentwas pronouncedly increased in the CIGS cells. The open-circuit voltagedepended on both the Ga composition and Cu composition at the CIGSsurface. In particular, a low Cu composition at the CIGS surface was essentialfor the higher performance solar cells. Our results indicated that CIGSs filmsynthesized at high temperature must be annealed at 350 °C or below toreduce undesirable point defects.