http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Thick AlN Epilayer Grown by Using the HVPE Method Hunsoo
전훈수,이찬미,이찬빈,양민,이삼녕,안형수,유영문,이상칠,김석환,Nobuhiko Sawaki 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.4
A thick AlN epilayer is grown directly on a c-plane sapphire substrate by using the hydride vapor phase epitaxy (HVPE) method with a small quantity of Al. The new type (RF + hot-wall) flow HVPE reactor used in the AlN epilayer growth is custommade. The growth temperatures of the source and the growth zones are set at 950 C and 1145 C, respectively. The characteristics of the AlN layer grown on a sapphire substrate are investigated by using energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) spectroscopy. The value of the full width at half maximum (FWHM) for the (002) peak from the AlN layer on the sapphire substrate is observed at 790 arcsec. From the small value of the FWHM, the AlN layer seems to be a well-arranged plane with a uniform (002) growth direction on a sapphire substrate.
옥진은,조동완,한영훈,전훈수,이강석,정세교,배선민,안형수,양민 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.5
The influence of Sb as a surfactant on the morphology and on the structural and the optical characteristics of a-plane GaN grown on r-plane sapphire by using mixed-source hydride vapor phase epitaxy was investigated. The a-plane GaN:Sb layers were grown at various temperatures ranging from 1000 ℃ to 1100 ℃, and the reactor pressure was maintained at 1 atm. The atomic force microscope (AFM), scanning electron microscope (SEM), X-ray diffraction (XRD) and photoluminescence (PL) results indicated that the surface morphologies and the structural and the optical characteristics of a-plane GaN were markedly improved, compared to the a-plane GaN layers grown without Sb, by using Sb as a surfactant. The addition of Sb was found to alter epitaxial lateral overgrowth (ELO) facet formation. The Sb was not detected from the a-plane-GaN epilayers within the detection limit of the energy dispersive spectroscopy (EDS) and x-ray photoelectron spectroscopy (XPS) measurements, suggesting that Sb act as a surfactant during the growth of a-plane GaN by using mixed-source HVPE method.
전인준,이하영,노지연,안형수,이삼녕,전훈수,신민정,유영문,하동한 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.69 No.5
We report on crystallographic analyses of one-dimensional GaN nanoneedles grown on a n-GaN epilayer by using hydride vapor phase epitaxy. The nanoneedles were grown with a HCl:NH3 gas flow ratio of 1:38 at 600 C. The growth time of the GaN nanoneedles affected their morphologies. As time progressed, GaN dots nucleated and then evolved as nanoneedles. The vertical growth rate of GaN nanoneedles was higher than the lateral growth rate under optimized growth conditions. X-ray pole figure measurements were carried out using a four-axis diffractometer. For the sample grown for 20 min, we obtained discrete patterns with six strong dots and weak dough-nut and cotton swab patterns, indicating that most of the nanoneedles were grown ideally, but partially, in the x-y plane with an azimuthal rotation angle = 15 45 rotated to the substrate, and a few GaN nanoneedles were tilted by ±4 or by more than 32 from the vertical c-axis.
노지연,이하영,임경원,안형수,이삼녕,전훈수,신민정,유영문,하동한 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.6
An inorganic-organic hybrid junction has been fabricated by spin coating the p-type poly(3- hexylthiophene-2,5-diyl)(P3HT) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) on an n-type GaN layer. The GaN layer was formed on Al2O3 by metal organic chemical vapor deposition(MOCVD) method. To investigate the effects of P3HT concentration on the electrical properties, we changed P3HT solution concentration and speed of spin coater. The currentvoltage (I-V ) characteristic of Au/PEDOT:PSS/P3HT/n-GaN shows rectifying behavior. The I-V characteristic was examined in the frame work of the thermionic emission model. The most proper rectifying behavior was obtained for 0.6 wt% and thickness below 65 nm of P3HT used diode. We expect that such hybrid structures, suitably developed,