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전호식 ( Jeon Ho Sik ),배병성 ( Bae Byung Seong ) 한국센서학회 2010 센서학회지 Vol.19 No.6
Display quality depends on panel temperatures. To compensate it, temperatures sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature. the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the hack light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality. hysteresis, repeatability, stability, and accuracy.
전호식(Ho Sik Jeon),허양욱(Yang Wook Heo),이재표(Jae Pyo Lee),한상윤(Sang Youn Han),배병성(Byung Seong Bae) Korean Society for Precision Engineering 2012 한국정밀공학회지 Vol.29 No.11
This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a- SiGe:H TFT was suitable for IR.