고주파 유전체 세라믹 (Ca_0.7Sr_0.3)_m(Ti_yZr_1-y)O₃의 전기적 특성 및 미세구조

전명표,박명성,강경민,남중희,조정호,김병익,Chun, Myoung-Pyo,Park, Myoung-Sung,Kang, Kyung-Min,Nam, Joong-Hee,Cho, Jeong-Ho,Kim, Byung-Ik 한국결정성장학회 2010 韓國結晶成長學會誌 Vol.20 No.1

고주파 유전체 세라믹 $(Ca_{0.7}Sr_{0.3})_m(Ti_yZr_{1-y})O_3$ 의 미세구조 및 전기적 특성에 대한 Ti 이온 및 몰비의 영향을 조사하였다. $CaZrO_3$의 Zr 위치에 Ti 이온의 치환은 세라믹 소체의 소결밀도 및 미세구조에 큰 영향을 미친다. Zr 위치에 Ti 이온의 치환량 증가에 따라, 소결밀도는 급격히 증가하고, 몰비 m=1.01에서 치밀한 미세조직이 얻어졌다. 한편, 몰비 m=0.99 조성에 대해서는 Ti 치환량이 증가하여도 소결밀도 및 미세구조는 거의 변화가 없이 일정하였다. Ti 치환량 증가에 따라 TCC (temperature coeITicient of capacitance) 곡선은 시계방향으로 회전하여 몰비 m=0.99, 1.01 조성에 대해 COG 특성을 만족하였다. $CaZrO_3$의 TCC 및 소결특성 제어를 위해서는 Ti 치환량이 몰비보다는 효과적임을 보여준다. The effects of mole ratio(A/B) m and Ti-ion on the dielectric properties and microstructure of the microwave dielectric ceramics $(Ca_{0.7}Sr_{0.3})_m(Ti_yZr_{1-y})O_3$ were investigated. Ti ions substituted on Zr-sites in these modified $CaZrO_3$ composition strongly affect the sintering density and microstructure of the fired ceramic body. With increasing the amount of Ti substituted on Zr-sites, the sintered density rapidly increased and the dense microstructure was obtained for the compositions having mole ratio of 1.01, whereas the sintered density and microstructure are nearly constant with the content of Ti-ion for the compositions having mole ratio of 0.99. With increasing the content of Ti ion, the curve of TCC (Temperature Coefficient of Capacitance) as a function of temperature rotated clockwise and satisfied the COG characteristics for both of compositions with mole ratio of 0.99 and 1.01. The content of Ti ion seems to be more effective than mole with respect to the controlling of firing and TCC.

BaTiO₃ PTC 써미스터의 미세구조 및 전기적 특성에 대한 SiO₂ 영향

전명표,Chun, Myoung-Pyo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.1

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

세라믹 패키지를 이용한 표면실장형 다이오드의 제작과 특성평가

전명표,조상혁,한익현,조정호,김병익,유인기,Chun, Myoung-Pyo,Cho, Sang-Hyeok,Han, Ik-Hyun,Cho, Jeong-Ho,Kim, Byung-Ik,Yu, In-Ki 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.5

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

적층 PTC 써미스터의 전기적 특성에 대한 재산화의 영향

전명표,Chun, Myoung-Pyo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.2

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

전기방사에 의한 질화붕소 나노분말의 함량에 따른 질화붕소 나노섬유 합성 및 특성 평가

이종혁,전명표,황진아,정영근,주제욱,Lee, Jong Hyeok,Chun, Myoung Pyo,Hwang, Jin Ah,Jung, Young Geun,Chu, Jae Uk 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.7

Boron nitride (BN) nanofibers were fabricated using BN nanoparticles (70 nm) by electrospinning. Morphologies such as the diameter and density of the BN nanofibers are strongly influenced by the viscosity and dispersion state of the precursor solution. In this study, the precursor solution was prepared by ball milling BN nanoparticles and polyvinylpyrrolidone (PVP, Mw~1,300,000) in ethanol, which was electrospun and then calcined to produce BN fibers. High-quality BN nanofibers were well fabricated at a BN concentration of 15 wt% with their diameters in the range of 500 nm to 800 nm; the viscosity of the precursor solution was $400mPa{\cdot}S$. The calcination of the as-electrospun BN fibers seemed to be completed by holding them at $350^{\circ}C$ for 2 h considering the TGA data. The morphologies and phases of the BN fibers were investigated by scanning electron microscopy (SEM) and X-ray diffractometry (XRD), respectively; Fourier transform infrared (FT-IR) was also used for structure analysis.

세라믹(BNT)-폴리머(LCP) 복합체 제조 및 유전특성

박명성,전명표,조정호,남중희,최병현,남산,Park, Myoung-Sung,Chun, Myoung-Pyo,Cho, Jung-Ho,Nam, Joong-Hee,Choi, Byung-Hyun,Nahm, Sahn 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.11

In this research, the composites (100-x)LCP-xBNT (x = 0, 10, 20, 30, 40 vol.%) were fabricated with thermoplastic LCP(Liquid Crystal Polymer) and BNT($BaNd_2Ti_4O_{12}$) which is a high frequency dielectric material. Their dielectric properties, mechanical strength and microstructure were investigated by Impedance analyser, Instron and SEM. In order to fabricate LCP-BNT composites, LCP resin was put into the twin screw type mixer($310^{\circ}C$), melted by keeping for 10 min. After that, BNT filler was dispersed with melted LCP resin for 15 min. in the mixer. For measuring the dielectric properties and mechanical strength, Composite specimens were made by pressing composite granule (LCP-BNT) with 7 ton in the mold at $310^{\circ}C$. With increasing the BNT content (0~40 vol.%) of the composite, Its dielectric constant increased, dielectric loss and flexural strength decreased. The dielectric constant and flexural strength of composites with 20~30 vol.% of BNT filler are 4.1~6.0 and 35~55 MPa respectively. BNT/LCP composite is the potential substrate material for the high frequency application.

세라믹(BNT)-폴리머(BCB) 복합체의 경화 거동과 유전특성에 대한 연구

김운용,전명표,조정호,김병익,명성재,신동욱,Kim, Un-Yong,Chun, Myoung-Pyo,Cho, Jung-Ho,Kim, Byung-Ik,Myoung, Sung-Jae,Sin, Dong-Uk 한국결정성장학회 2007 한국결정성장학회지 Vol.17 No.6

We made $(1-x)BCB-xBNT(BaNd_2Ti_4O_{12})$ (x=20, 30, 40, 50 vol%) composite thick film with a high dielectric constant and low loss by the hand casting method. Dielectric constant and dielectric loss of prepared thick film are measured at 1MHz and curing behavior of the film are observed through thermal analysis such as DSC. We investigated the effect of contents of BNT filler and curing behavior of film on dielectric properties of BCB-BNT composite. Dielectric constant increased with increasing BNT filler from 20 to 50 vol% and dielectric loss ($tan{\delta}$) decreased with increasing BNT filler. Dielectric constant and loss ($tan{\delta}$) of composite material was not nearly dependent on the curing behavior. But as a result of TCC (Temperature Characteristics of Coefficient) decreased with increasing the curing temperature, we confirmed that the curing of these composite system is most stable above $250^{\circ}C$. 높은 유전상수와 낮은 유전손실을 가지는 $(1-x)BCB-xBNT(BaNd_2Ti_4O_{12})$ (x=20, 30, 40, 50 vol%) 복합 재료를 제작하였다. 제작된 film의 유전 상수와 유전 손실은 1 MHz에서 측정되었고, DSC와 같은 열분석을 통하여 그 경화거동을 관찰하고, BNT의 함량과 film의 경화 거동이 유전특성에 어떠한 영향을 미치는지에 대하여 조사하였다. 충진제로 사용된 BNT가 $20{\sim}50vol%$까지 증가함에 따라 그 복합체의 유전상수는 증가, 유전 손실($tan{\delta}$)은 감소하였고, BCB-BNT 복합체의 유전 상수와 유전 손실($tan{\delta}$)은 경화 반응에 거의 영향을 받지 않는다. 그러나 경화 온도가 증가함에 따라 TCC(Temperature Characteristics of Coefficient)가 감소하는 것으로 복합체의 경화는 $250^{\circ}C$ 이상에서 가장 안정하다는 것을 확인하였다.

Goethite의 합성 및 형상제어

최현빈,전명표,전승엽,황진아,Choi, Hyun-Bin,Chun, Myoung-Pyo,Chun, Seung-Yeop,Hwang, Jin-Ah 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.9

Goethite, ${\alpha}$-FeOOH have various applications such as absorbent, pigment and source for magnetic materials. Goethite particles were synthesized in a two step process, where $Fe(OH)_2$ were synthesized in nitrogen atmosphere using $FeSO_4$ as a raw material in the first process, and after that acicular goethite particles were obtained in an air oxidation process of $Fe(OH)_2$ in highly alkaline aqueous solution. Their phase and microstructure were investigated with XRD and FE-SEM. It was found that the morphology of goethite and the ratio of length-to-width (aspect ratio) of acicular goethite are dependent on the some factors such as R value ($OH^-/Fe^{2+}$), air flow rate and pH conditions. In particular, R value has the strongest influence on the synthesized goethite morphology. It is considered that the optimal value R is 4.5 because X-ray diffraction peaks of goethite have the highest intensity at that value. Morphology of goethite particles was controlled by air flow rates, showing that their size and aspect ratio are getting smaller and decrease, respectively as air flow rate increases. The largest goethite particle obtained is about 1,500 nm in length and 150 nm in diameter.

RF 마그네트론 스퍼터링에 의해 제조된 AlN 박막의 증착 특성

송종한,전명표,최덕균,Song, Jong-Han,Chun, Myoung-Pyo,Choi, Duck-Kyun 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.12

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

알루미나-TZP(3Y) 세라믹스 복합체의 제조 및 기계적 특성

윤제정,전명표,남산,Yoon, Jea-Jung,Chun, Myoung-Pyo,Nahm, San 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.3

Composite ceramics of alumina-TZP(3Y) have good mechanical and electrical properties. So, They have been used as high strength refractory materials and thick film substrates, etc. In this study, Composite ceramics of alumina-TZP(3Y) were fabricated by uniaxial pressing and sintering at 1,400, 1,500, and $1,600^{\circ}C$, and their microstructures and mechanical properties were investigated. As the TZP(3Y) content in composite ceramics increases from 20 wt.% to 80 wt.%, the fracture toughness increases monotonically, which seems to be related to the higher relative density and/or toughening mechanism by means of stabilized tetragonal zirconia phase at room temperature. In contrast to the fracture toughness, Vickers hardness of the composite ceramics shows maximum value (1,938 Hv) at a 40 wt.% of TZP(3Y). The result of Vickers hardness is likely to be due to more dense sintered microstructure of composite ceramics than pure alumina and reinforcement of composite ceramics with TZP(3Y), considering that Vickers hardness of pure $Al_2O_3$ is greater than that of TZP(3Y). It is also shown that the $ZrO_2$ particles are $l^{\circ}Cated$ between $Al_2O_3$ grains and suppress grain growth each other.