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Electronic Structure, Bonding, and Lithium Migration Effects of the Mixed Conductor β - LiAl
장건익(Gun-Eik Jang),I.M. Curelaru 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.3
전자구조(valence 와 conduction band) 해석을 통하여 이론상으로 현저한 금속 특성을 갖는다고 알려진 혼합 전도체 β-LiAl은 실제 이론과는 달리 Fermi level 에서 하나의 quasi-gap 이 존재하고 conduction 상태가 상당히 localized 되어 있음이 본 연구의 세부적 실험을 통하여 밝혀졌다. 또한 기계적 표면처리나 입자 bombardment(전자나 이온)을 통하여 야기되는, Li 이온의 복잡한 이동 거동에 관하여도 고찰하였다. Detailed experimental studies of the electronic structure of the valence and conduction bands of the mixed conductor β-LiAl indicate that a quasi-gap opens at the Fermi level, and the conduction states are highly localized, as opposed to the theoretical band structure calculations that predict predominant metallic behavior. Evidence for complex lithium migration effects involving the surface of LiAl, induced by particle (electron or ion) bombardment and mechanical treatment, has been obtained as a byproduct of these experiments.
PECVD법에 의해 제조된 SnO<sub>2</sub> 박막의 공정변수에 따른 미세구조 및 특성
이정훈,장건익,손상희,Lee, Jeong-Hoon,Jang, Gun-Eik,Son, Sang-Hee 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.7
Tin oxide$(SnO_2)$ thin films were prepared on glass substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. $SnO_2$ thin films were prepared using gas mixture of dibutyltin diacetate as a precursor and oxygen as an oxidant at 275, 325, 375, $425^{\circ}C$, respectively as a function of deposition temperature. The XRD peaks corresponded to those of polycrystalline $SnO_2$, which is in the tetragonal system with a rutil-type structure. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and shorter deposition time led to decreasing surface roughness and electrical resistivity of the formed thin films at $325\sim425^{\circ}C$. The properties of $SnO_2$ films were critically affected by deposition temperature and time.
CaF<sub>2</sub> 두께 변화에 따른 ZnS/CaF<sub>2</sub>/ZnS/Cu 다층 박막의 광특성
김준식,장건익,Kim, Jun-Sik,Jang, Gun-Eik 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.7
Layered ZnS/$CaF_2$/ZnS/Cu film was deposited on glass substrate by using evaporation method. ZnS and $CaF_2$ were chosen as high and low refractive materials. Cu was used as mid-reflective layer. Reflectance with different optical thickness of $CaF_2$ ranging from $0.25{\lambda}\;to\;0.5{\lambda}$ were systematically investigated by using spectrophotometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer, the ZnS/$CaF_2$/ZnS/Cu multi-layered thin film show the maximum reflectance of 80% at 625nm $(0.25{\lambda}\;in\;CaF_2)$ and 42% at 660nm $(0.5{\lambda}\;in\;CaF_2)$ respectively. As compared with the experimental results and simulation data, it was confirmed the experimental data is well matched with the EMP data.
Ga 첨가물이 ZnO의 전기적, 광학적 특성에 미치는 영향
김준식,장건익,Kim, Jun-Sik,Jang, Gun-Eik 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.9
ZnO with the wide band gap near 3.37 eV is typically an n-type semiconductor in which deviation from stoichiometry is electrically active. It was known that the films with a resistivity of the order of $10^{-4}{\Omega}cm$ is not easy to obtain. In order to improve electrical characteristic of ZnO, we added 1, 3, 5 wt% Ga element in ZnO. The Ga-doped ZnO (GZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of GZO films showed preferable crystal orientation of (002) plane. The lowest resistivity of the GZO films was $8.9{\times}10^{-4}{\Omega}cm$. GZO films significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.
Si 첨가물이 ZnO의 전기적, 광학적 특성에 미치는 영향
김준식,장건익,Kim, Jun-Sik,Jang, Gun-Eik 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
ZnO is an n-type semiconductor with a wide band gap near 3.37 eV. It was known that ZnO films with a resistivity of the order of $10^{-4}\;{\Omega}cm$ is not easy to obtain. 1, 3, and 5wt% Si element were added into ZnO in ordre to improve the electrical and optical characteristics. The Si-doped ZnO (SZO) was grown on a glass substrate by radio frequency (RF) magnetron sputtering at the temperature range from 100 to $500^{\circ}C$. X-ray diffraction (XRD) patterns of SZO film showed preferable crystal orientation of (002) plane. It was confirmed that the lowest resistivity of the SZO films was $2.44{\times}10^{-3}{\Omega}cm$ and SZO films were significantly influenced by the working temperature. The average transmittance of the films was over 80% in the visible ranges.
김준식,장건익,Kim, Jun-Sik,Jang, Gun-Eik 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
The optical properties of multi layered thin films with $Sb_2O_3/Na_3AlF_6/Sb_2O_3/Cr$ were simulated by using EMP(Essential Macleod Program). EMP is a comprehensive software package to design and analyse the optical characteristics of multi-layered thin film. $Sb_2O_3$ and $Na_3AlF_6$ were selected as a high refractive index and low refractive index material respectively. Additionally Cr was chosen as mid reflective material. Optical properties including color effect were systematically studied in terms of different optical thickness of low refractive index material. The optical thickness of $Na_3AlF_6$ was changed as 0.25, 0.5, 0.75 and $1.0\lambda$. The film with 0.25, 0.5, 0.75 and $1.0\lambda$ of optical thickness showed mixed color range between purple and red range, yellowish green and bluish green, purple and mixed color range of green and purple respectively.
이서희,장건익,Lee, Seo-Hee,Jang, Gun-Eik 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.1
The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.
Si<sub>3</sub>N<sub>4</sub>/SnZnO/AZO/Ag/Ti/ITO 다층 박막의 적층 횟수에 따른 광학적 특성
이상윤,장건익,Lee, Sang-Yun,Jang, Gun-Eik 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.1
In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.
HIP 공정 시 압력 변화가 ZnS의 치밀화와 투과율에 미치는 영향
권인회,장건익,Gwon, In-He,Jang, Gun-Eik 한국분말재료학회 (*구 분말야금학회) 2021 한국분말재료학회지 (KPMI) Vol.28 No.4
In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125-205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIP-ZnS was obtained under the optimal conditions (1010℃, 205 MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.
Thermal Evaporation법으로 제작한 ZnO 나노선의 온도와 산소유량에 따른 성장 특성
오원석,장건익,Oh, Won-Seok,Jang, Gun-Eik 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.8
Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.