http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Sol-Gel 방법을 이용하여 제작된 Pt이 첨가된 Fe<sub>2</sub>O<sub>3</sub> 나노 입자의 가스 감지 특성
장민형,임유성,최승일,박지인,황남경,이문석,Jang, Min-Hyung,Lim, Yooseong,Choi, Seung-Il,Park, Ji-In,Hwang, Namgyung,Yi, Moonsuk 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.5
$Fe_2O_3$ is one of the most important metal oxides for gas sensing applications because of its low cost and high stability. It is well-known that the shape, size, and phase of $Fe_2O_3$ have a significant influence on its sensing properties. Many reports are available in the literature on the use of $Fe_2O_3$-based sensors for detecting gases, such as $NO_2$, $NH_3$, $H_2S$, $H_2$, and CO. In this paper, we investigated the gas-sensing performance of a Pt-doped ${\varepsilon}$-phase $Fe_2O_3$ gas sensor. Pt-doped $Fe_2O_3$ nanoparticles were synthesized by a Sol-Gel method. Platinum, known as a catalytic material, was used for improving gas-sensing performance in this research. The gas-response measurement at $300^{\circ}C$ showed that $Fe_2O_3$ gas sensors doped with 3%Pt are selective for $NO_2$ gas and exhibita maximum response of 21.23%. The gas-sensing properties proved that $Fe_2O_3$ could be used as a gas sensor for nitrogen dioxide.
Solution-Processed Al<sub>2</sub>O<sub>3</sub> 확산층을 이용한 Sputtering IZO Thin Film Transistor의 안정성 향상
황남경,임유성,이정석,이세형,이문석,Hwang, Namgyung,Lim, Yooseong,Lee, Jeong Seok,Lee, Sehyeong,Yi, Moonsuk 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.5
This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.