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성영권,성만영,정세진,임경문 고려대학교 공학기술연구소 1991 고려대학교 생산기술연구소 생기연논문집 Vol.27 No.1
In this paper, the characteristics of LIGBT, SINFET and HSINFET were experimentally investigated. The forward current densities were 0.73 A/㎠, 0.09 A/㎠ and 0.18 A/㎠, when 2.0 V was applied to the gate and the anode with the cathode grounded. It is concluded that LIGBT can be applied to the low speed and high power integrated circuits(PIC'S) and SINFET or HSINFET is desirable to be used in the high speed and low PIC'S.