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인치승,김시연,여동훈,신효순,남산,In, Chi-Seung,Kim, Shi Yeon,Yeo, Dong-Hun,Shin, Hyo-Soon,Nahm, Sahn 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.12
With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.
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인치승,여동훈,신효순,Sahn Nahm,최원역 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.7
In accordance with the trend for mobile terminals to be high intensity and to have thinner layers,low temperature co-fired ceramics (LTCC) materials with outstanding dielectric loss characteristicsand diverse dielectric constants have been in demand, and the need for high-strength materials thatcan withstand external shocks has increased. Ca[(Li1/3Nb2/3)1−xTix]O3−δ (CLNT) has a qualityfactor over 14,000 and τf ≤ 10 when the dielectric constant is 41 ∼ 46, but its sintering temperatureis high at 1150◦C. Therefore, it cannot be used as a LTCC component. This study aimed to lowerthe sintering temperature to 900◦C by adding a low-melting-point glass such as B2O3·SiO2·BaOand B2O3·SiO2·Al2O3. As the glass content in CLNT was increased from 10 wt% to 20 wt%, thedensity and the Q·f0 property decreased, and the dielectric constant rose. When B2O3·SiO2·BaOwas added to CLNT at 15 wt%, the dielectric constant was found to be 27, the Q·f0 property to be3470, and the τf to be −18 ppm/◦C. When B2O3·SiO2·Al2O3 was added to CLNT at 10 wt%, thedielectric constant was 20, the Q·f0 property was 3990, and the τf was −15 ppm/◦C. As such, inboth cases, excellent dielectric properties were observed.
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모바일 전자기기 사용을 위한 고강도 무수축 기판의 구현
인치승(Chi-Seung In),여동훈(Dong-Hun Yeo),이종덕(Jong-Deok Lee) 한국엔터테인먼트산업학회 2015 한국엔터테인먼트산업학회논문지 Vol.9 No.4
휴대단말기의 소형, 고기능, 경박단소화 추세에 따라 가능한 많은 부품들을 하나의 모듈 속에 포함시키는 방향으로 기술 발전을 거듭하고 있다. 따라서 내장 소자의 고집적화, 고밀도 실장을 위해 고강도 특성의 무수축 기판에 대한 관심이 높아지고 있다. 본 연구에서는 강도와 내화학성이 우수한 anothite glass와 Al₂O₃를 이용하여 Al₂O₃/LTCC/Al₂O₃ 구조로 적층하여 모바일 전자기기를 위한 고강도 무수축 기판을 구현하고자 하였다. anothite glass와 Al₂O₃를 함량별로 850℃와 900℃에서 소성한 결과, 900℃에서 glass의 유동성이 높아 anothite glass와 Al₂O₃가 0.75:0.25 mol에서 infiltration depth가 11.08㎛로 최대값을 나타내었다. anothite glass와 Al₂O₃를 함량별로 900℃에서 소성한 결과, anothite glass와 Al₂O₃가 0.7:0.3 mol인 조성에서 소결밀도 2.71g/㎤, 강도 200Mpa의 우수한 특성을 나타내었다. Currently, it is being continued that the many components as possible in accordance with the compact, high-performance, frivolous stage digestion trend of the portable terminal in the direction of the technology is contained in a single module. Therefore, It has increased interest in the zero-shrinkage substrate of high strength characteristics for high integration of the built-in element, high-density packaging. The aim of this study was to implement a high-strength zero-shrink laminate substrate for mobile device with Al₂O₃/LTCC/ Al₂O₃ structure using anothite glass in excellent strength and chemical resistance and Al₂O₃. Al₂O₃/LTCC/Al₂O₃ substrates according to ratio of glass and Al₂O₃ were fabricated. and were sintered at a temperature of 850 [℃] and 900 [℃]. The infiltration depth exhibited the maximum value of 11.08㎛ at Al₂O₃/LTCC/Al₂O₃ substrates according to ratio of glass and Al₂O₃ of 0.75:0.25 with sintering temperature of 900℃. This is because the fluidity of the substrate sintered at 900℃ to 85 0℃ is the higher. Also, At Al₂O₃/LTCC/Al₂O₃ substrates according to ratio of glass and Al₂O₃ of 0.7:0.3 with sintering temperature of 900℃, Excellent characteristics of sintered density 2.71g/㎤, and strength 200 MPa were exhibited.
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