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비정질 인듐갈룸ᅳ아연-산화물 박막트랜지스터 기반의 AMOLED 화소 회로
이재표(Jae-Pyo Lee),유경민(Kyeong-Min Yu),장진녕(JinNyoung Jang),홍문표(MunPyo Hong),배병성(Byung Seong Bae) 호서대학교 공업기술연구소 2013 공업기술연구 논문집 Vol.32 No.2
본 논문은 비정질 인둠ᅳ갈f ᅳ아연-산화물 박막트랜지스터 (a-IGZO TFT)를 이용하여 능동형 유기발광다이오드 (AMOLED)용 문턱전압(Vth )을 보상하는 화소 회로를 제안하였다. 산화물 TFT는 n-채널 TFT로써, 우리는 n-채널 TFT 특성으로 회로를 최적화하였다. 제안된 화소 회로는 회로 시뮬레이션 뿐만 아니라 회로 분석을 이용하여 확인되었다. 제안된 화소 회로는 AMOLED에서 구동 TFT의 문턱전압 변화를 보상할 수 있다. 제안된 화소 회로를 이용함으로써, 문턱전압 보상은 달성되었다. rhis paper proposes a tnresnold voltage compensation pixel circuit for active-matrix organic light-emitting diode (AM OLED) using amorphous indium-gaUiimi-zinc-oxide thin-film transistors (a-IGZO TFTs), Oxide TFT is an n-channel TFT; therefore, we optimized the circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified using circuit analysis as well as circuit simulations. The proposed circuit could compensate for the threshold voltage variations o f drive TFT in AM OLED. Using the proposed pixel circuit, threshold voltage compensation was achieved.
전호식(Ho Sik Jeon),허양욱(Yang Wook Heo),이재표(Jae Pyo Lee),한상윤(Sang Youn Han),배병성(Byung Seong Bae) Korean Society for Precision Engineering 2012 한국정밀공학회지 Vol.29 No.11
This paper presents a study of an integrated infrared (IR) photo sensor for display application. We fabricated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and hydrogenated amorphous silicon germanium thin film transistor (a-SiGe:H TFT) which were bottom gate structure. We investigated the dependence of a-SiGe:H TFT characteristics on incident wavelengths. We proposed photo sensor which responded to wavelengths of IR region. Proposed pixel circuit of photo sensor was consists of switch TFT and photo TFT, and one capacitor. We developed integrated photo sensor circuit and investigated the performance of the proposed sensor circuit according to the input wavelengths. The developed photo sensor circuit with a- SiGe:H TFT was suitable for IR.