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고밀도 플라즈마 화학 증착 장치를 이용한 TiB₂ 박막 제조
이승훈(S. H. Lee),남경희(K. H. Nam),홍승찬(S. C. Hong),이정중(J. J. Lee) 한국표면공학회 2005 한국표면공학회지 Vol.38 No.2
The ICP-CYD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of TiB₂ films. For plasma generation, 13.56 ㎒ r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of TiCI₄, BCI₃, H₂ and Ar was used for TiB₂ deposition. TiB₂ films with high hardness (>40 ㎬) were obtained at extremely low deposition temperature (250℃), and the films hardness increased with ICP power and gas flow ratio of TiCI₄/BCI₃. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric TiB₂ films and film densification induced by high density plasma.