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5-BROMO-2-THIOURACIL의 新合成法에 對한 硏究
李東律,韓松潤 동국대학교 대학원 1972 大學院硏究論集-東國大學校 大學院 Vol.1 No.-
A study for New Synthesis of 5-Bromo-2-Thiouracil. Diazotization of 5-amino Substituted 2-thiouracil and 6-methyl-2-thiouracil were Carried out and the Sandmeyer bromination was tried on the diazotized 5-amino-2-thiouracil. The yield of diazotized Compounds was 75∼86% of theoretical amount. Diazotized 5-amino thiouracil gave 5-Bromo thiouracil on Sandmeyer reaction with poor yield. The melting point of the product matched well with the 5-bromo uracil prepared by direct bromination of 2-thiouracil.
MBE로 성장시킨 $\textrm{In}_{0.1}\textrm{Ga}_{0.1}\textrm{As}$에피층의 Photoreflectance 특성 연구
이동율,유재인,손정식,김기홍,이동건,이정열,배인호,손영호,황도언,Lee, Dong-Yul,Yu, Jae-In,Son, Jeong-Sik,Kim, Gi-Hong,Lee, Dong-Geon,Lee, Jeong-Yeol,Bae, In-Ho,Son, Yeong-Ho,Hwang, Do-Eon 한국재료학회 1999 한국재료학회지 Vol.9 No.5
We have investigated the photoreflectance characteristics for In\ulcornerGaAs/GaAs heterojunction structure grown by molecular beam epitaxy (MBE). The E\ulcorner bandgap energy of In\ulcornerGa\ulcornerAs at room temperature was observed at about 1.3 eV. From this result, the indium composition x value was calculated. The shoulder peaks were observed higher than E\ulcorner peaks, and peak positions were shifted toward 12 meV to 70 meV higher energy with increasing doping concentrations. The shoulder peaks can be observed by In segregation and re-evaporation. However, we think that indium re-evaporation cause th shift of shoulder peaks after epilayer growth.
급속 열처리시킨 Al0.24Ga0.76As/In0.15Ga0.85As/GaAs 슈우도형 고전자 이동도 트랜지스터 구조의 Photoluminescence 특성
이동율,배인호,신영남 한국물리학회 2002 새물리 Vol.45 No.5
Using photoluminescence (PL) spectroscopy, we have investigated the optical characteristics of a delta-doped Al0:24Ga0:76As/In0:15Ga0:85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing(RTA). In the PL spectra measured at 12 K, a transition from the first electron subband to the second heavy hole (E1-H2) at 1.354 eV is newly observed at annealing temperatures above 650 C. The presence of the E1-H2 intersubband transition can be explained by the high availability of holes in the second heavy-hole subband, resulting from an increase in the effective well width of the InGaAs valence subband caused by a decrease in the band bending and a decrease in the density of the two-dimensional electron gas during the RTA process. 급속열처리시킨 델타~도핑 Al0.24Ga0.76As/In0.15Ga0.85As/GaAs 슈우도형 고전자 이동도 트랜지스터 구조의 광학적 특성을 photoluminescence(PL)방법을 이용하여 조사하였다. 650 C이상의 온도에서 열처리한 시료의 12K PL 스펙트라에 대해 첫번째 전자 준위와 두번째 무거운 정공 준위의 재결합(E1-H2)에 의한 신호가 약 1.354eV 에서 새롭게 관측되었다. 12K PL 스펙트라에서 E1-H2 전이의 관측은 급속 열처리 후에 InGaAs 양자우물 형태의 변화와 2DEG 밀도의 감소의 결과로 InGaAs 가전자띠의 두번째 부띠(H2)의 정공 밀도의 증가에 기인된 것이다.
李東律 건국대학교 1998 학술논문집 : 건국대 대학원 Vol.46 No.1
Der Striet um den rechtsfa¨higen Vereins ist wegen der Klarheit des Subjekts linfach. Unsere ZPO amerkennt dem nichtrechtsfa¨higen Korporation weitere Parteifa¨higkeit als die materiellrechtliche Rechtsfa¨higkeit. Die Frage, welchem Verein die parteifa¨higkeit anerkannt wird, ist der Auslegung u¨berlassen. Es wird zum Teil behauptet, daß unter ??48ZPO Gesellschaf Subsumiert werden soll. Es wu¨rde viele Schwierigkeiten entstehen, wenn in dem streit, der mit vielen Leuten bezogen ist, nicht der Verein selbst, sondem die allenbezogenen Leute prozeßpartei wa¨ren. deshalb ist es wu¨nschenswert, daß nicht der einzelne, sondern der verein in them streit anftrift. Es muß noch untersucht werden, ob den vermin prozeßfa¨1ugkeit anzuerkennen ist.