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신백균,이덕출 ( P . K . Shin,D . C . Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.3
Using SiC1₂H₂, NH₃ and N₂O, we have fabricated silicon oxynitride (Si_xO_yN_z) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios(NH₃/N₂O) to 0.2, 0.5 and 2 with fixed gas flow of SiC1₂H₂. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.
오위(AO WEI),신백균(P.-K. SHIN),송창호,박구범(G.-B. Park),유도현(D.-H. Yu),이선우(Sunwoo Lee),이붕주(B.-J. Lee),이덕출(D.-C. LEE) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
Recently poly styrene (PPS) and poly vinyl acetate (PVA) are being investigated as a gate insulator for organic thin film transistors(OTFTs), because their dielectric constant for PVA and PPS is high enough to be used for gate insulator in the OTFT device. We report characteristics of single layer dielectric constant for PPS and PVA, and double layer of PPS/PVA prepared by different plasma power. Composition and electrical properties of the plasma polymerized insulating layer were investigated by FT-IR, I-V, and C-V measurements. Influence of the preparation condition on the resulting plasma polymerized thin films were discussed.