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Reaction Sintering 에 의한 ZnO : Al2O3 합성물의 구조 및 광학적 특성
강병모,박계춘,유용택 ( Byeong Mo Kang,Gye Choon Park,Yong Tek Yoo ) 한국센서학회 1998 센서학회지 Vol.7 No.3
ZnO and Al₂O₃ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at 900 ℃ ∼ 1200 ℃ for 3 h in vacuum(3 X 10^(-5) Torr). According to XRD, remnant ZnO and Al₂O₃ not converted to ZnAl₂O₄ were observed up to 1100℃, which were completely changed to ZnAl₂O₄ ternary compound at 1200. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at 1200 ℃.
스퍼터링법에 의한 ZnO 투명전도막의 제작과 전기적 특성
정운조,조재철,정용근,유용택 ( Woon Jo Jeong,Jae Cheol Cho,Yong Kun Jeong,Yong Tek Yoo ) 한국센서학회 1997 센서학회지 Vol.6 No.1
ZnO thin film had been deposited the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was 1 x 10^(-3) Torr at room temperature, thin film deposited had strongly oriented c-axis and the lowest resistivity(1 x 10^(-4)Ω·cm), and then carrier concentration and Hall mobility were 6.27x10^(20) cm^(-3) and 22.04㎠/V·s, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut off the ultraviolet range below 330nm and the infrared and range above 850nm. And after annealing in hydrogen ate, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.