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2021년 이스라엘-팔레스타인 분쟁에서의 인지전 사례 연구
조상근,최순식,우성하,김기원,이승현,박상혁,Cho, Sang Keun,Choi, Soon Sik,Woo, Seong Ha,Kim, Ki Won,Lee, Seung Hyun,Park, Sang Hyuk 국제문화기술진흥원 2022 The Journal of the Convergence on Culture Technolo Vol.8 No.6
The "cognitive warfare," which has emerged as a result of the Ukrainian-Russian war, has already existed in the previous war and is now emerging as a major aspect of the war, its meaning and influence are increasing. Recognizing the emergence and importance of cognitive warfare and understanding the meaning and characteristics of cognitive warfare must be accompanied by victory in the modern war. After Russia's alleged involvement in the U.S. presidential election in 2016 drew attention, the Israeli-Palestinian conflict in 2021 confirmed its upward influence. In particular, 'cognitive warfare' using SNS played a major role in leading the war to its advantage and maintaining the initiative by selecting clear purposes and targets such as the international community, the people, and Hamas. This new pattern of war is gradually emerging as the world is hyper connected with the advent of the Fourth Industrial Revolution. It is expected that it will play a leading role in the future battle if it clearly recognizes the main contents of the new war, "Injijeon," and has the ability and ability to actively operate it.
Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer
박재근,이수환,김달호,양희두,김성준,신동원,우성하,이훈주,성현민,이상금,이곤섭 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
We have produced various transparent silicon membrane applications, such as solar cells, microstructures, sensors and displays by using silicon-on-nitride (SON) wafers. We first tried to make them by using silicon-on-insulator (SOI) wafers and a buried layer of SiO2 as an etch-stop layer. However, during the wet-etching process, the buried SiO2 layer did not completely block the potassium hydroxide (KOH) etchant. The silicon membrane eventually formed micro-cracks and the membrane broke along the line of micro-cracks. Because the etching selectivity between Si and SiO2 is only 200 : 1 in 30 % KOH at 80 C, the nanometer-order thickness of SiO2 is insufficient for a suitable etch-stop layer. We have, therefore, developed a wafer that combines a dielectric etchstop layer with a SOI wafer and that makes it possible to produce transparent silicon membranes of various thicknesses.