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왕진석 충남대학교 공업교육연구소 1985 論文集 Vol.8 No.1
Ion beam etching of silicon with N₂and Ar gas has been found to cause the band edge to bend downward near the surface of p-type silicon. Rectifying, rather than ohmic contacts are obtained on p-type silicon. These resalts are to be caused by ion beam etching of silicon. An annealing study revealed that that the damage can be annealed out at relatively high temperature.
As-Te-Si-Ge 유리質半導體의 스위칭現像에 關한 硏究
王鎭錫 충남대학교 1977 工業技術開發硏究所論文集 Vol.4 No.2
A switching phenomena of As-Te-Si-Ge amorphous semiconductor were investigated. All samples were known to have a threshold switching chatacteristics, not a memory switching. It is desiarable to explain the hreshold switching phenomenon by thermal pinching effect theory, since filamentary path was found in the electrode contact area after switching. Threshold voltages of sample #1, #2, #3, #4, are 780V, 1050V, 1600V, 2300V respectively.
工業系高等學校의 視聽覺敎育 實態分析과 그 改善方案에 關한 硏究
王鎭錫,吳承燁,朴東徹,林在鳳 충남대학교 공업교육연구소 1979 論文集 Vol.2 No.2
From the investigation of the records regarding audiovisual education and answers to questionnaires received, it appears urgent to improve the problem on audio-visual education in technical high schools as follows: 1. The provincial boards of education should give added financial suppart to technical high schools for audio-visual education. 2. Audio-visual committees should be formed for audio -visual education in each technical high school. 3. Each teachnical high school should have an A-V center and a teacher in charge of A-V equipment. 4. All teachers including the teachers in charge should have qualified training in the use of A-V equipment. 5. An organization producing audio-visual materials suitable to technical high school should be composed.
왕진석 충남대학교 공업교육연구소 1982 論文集 Vol.5 No.1
This paper deals with electrical and optical properties of ZnO thin films and show that ZnO films deposited by rf sputtering can be brought almost within the desired conductivity range for opto-electronic devices. The resistivity of ZnO film is about 10^-2Ωcm and transmission over visible range is about 80%.
왕진석,정홍배 연세대학교 대학원 1974 원우론집 Vol.2 No.1
Abstract In this paper, the difference of conductivities on Ge-Si-Te memory devices are investigated experimentally by making use of samples which are prepared with material of high purities Te(99.999%) and low purities Te (99.99%). By X-ray diffraction analysis and microscope, samples are proven to be plasses. Conductivities of samples are measured at temperature between 300˚K and 500˚K. At room temperrature, the dependence of frequency is investigated at the range between 50Hz and 200 Hz. As results by heat treaed method dc conductivities of heat treated samples are 101-102 orders higher than untreated samples and frequency dependence of ac conductivities are approximately same.
朴昌燁,王鎭錫 연세대학교 산업기술연구소 1981 논문집 Vol.13 No.1
Recently, heterojunction solar cells with a conducting transparent film (SnO₂, In₂O₃ or SnO₂/In₂O₃ mixtures) on silicon have been reported by many investigators. These heterojunction solars cells offer the possibility of fabrication of low cost solar cells with performance characteristic suitable for large scale terrestrial applications. The conducting transparent film permits the tranmission of solar radiation directly to the active region with little or no attenuation. Here, after the SnO₂ film was deposited by electron beam evaporation upon n-Si wafers and slide glasses, the cell was heated in air at 280-360[℃] respectively for 1 hour. The SnO₂ film is about 1000[Å] thick. Depending upon temperature of heating, the cell's final efficiency, short circuit currentr, open circuit voltage, and fill factor was varied widely. The sheet resistance was increased in the 260-280[℃] temperature range and decreased with temperature increased above 280[℃]. % transmittance of SnO₂ film is increased by 10[%] after heat treatment in air. The spectral response spreads from 3900[Å] to 9000[Å] and this range is wider than that of commercial silicon solar cells. Voc, Isc, FF and η of the device annealed in air 320[℃] are 0,4[V], 20[mA/cm²] 0.65, 5.2[%] respectively.
Ar 이온빔 에칭에 의한 실리콘 Schottky 장벽 변화
지희환,박명철,왕진석 忠南大學校 産業技術硏究所 1998 산업기술연구논문집 Vol.13 No.2
The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching conditions such as ion energy, incident angle and etching time has been investigated using the voltage-current and capacitance-voltage characteristics of metal-etched silicon contacts. For ion beam etched n-type silicons, Schottky barrier is reduced in proportion to ion beam energy and the specific contact resistance is reduced by barrier loweing effects. Not only etching time but also incident angle of ion beam have an effect on barrier height. Also, ionized Ar?? beam shows larger barrier variation than neutral Ar beam Annealing in an N₂ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples, and a minimum annealing temperature to recover IBE-induced barrier variation relates to ion beam energy. Experimental results show that the minimum annealing temperatures are 1000℃ for 1KeV, 6000℃ for 500eV, respectively.
金度宇,王鎭錫 忠南大學校 産業技術硏究所 1994 산업기술연구논문집 Vol.9 No.2
Transparent and conductive In₂O₃thin films were fabricated by activated reactive evaporation. In order to characterise the films, both electrical resistivity and transparency as a function of wave length were measured. In addition, the XRD was performed to investigate the crystal structure of the films. The electrical resistivity of Sn-doped In₂O₃thin films was found to be lower than those of pure In₂O₃.
드라이 에칭에 의한 손상에 Kaufman 이온원을 이용한 주소의 주입
왕진석(Jin Suk Wang) 대한공업교육학회 1985 대한공업교육학회지 Vol.10 No.2
It is shown that the damage created due to Ar ion beam etching can be removed by low energy hydrogen implantation wityout any heat treatment. Hydrogen implantation with beam energies ranging from 0.4 to 1.0 KeV were carried out for 15 min.
왕진석(Jin Suk Wang),조남인(Nam In Cho) 대한공업교육학회 1983 대한공업교육학회지 Vol.8 No.2
It is shown that efficient solar cells using oxide ZnO on single crystal silicon can be made by rf sputtering, The optical transparancy and ease of preparation of these films is excellent and the conductivity can easily be brought within the appropriate range of solar cell use by heat treatment in H₂. The transmission is typically 80 percent averaged over visible range. The open circuit voltage and fill factor is decreased, and the short circuit current is increased with increasing heat treatment temperature. The maximum conversion efficiency can be obtained when ZnO/Si device is heated at 350(℃) in H₂, 10 min and ZnO thickness is 5,000(Å).