지방교육행정 정보화 조직에서 동기부여가 업무성과에 미치는 영향: 협력문화의 매개효과

오혜근,나민주,이다현,Wenhui Wang 충남대학교 교육연구소 2024 교육연구논총 Vol.45 No.2

본 연구는 지방교육행정 정보화 조직에서 업무성과에 영향을 미치는 동기부여, 협력문화 간의 구조적 관계를 분석하는 데 목적이 있다. 이를 위해 지방교육행정 정보화 업무를 담당하고 있는 업무담당자들을 대상으로 한 인식조사를 바탕으로 구조방정식 모형 분석을 실시하였다. 분석 결과, 동기부여가 협력문화에 미치는 직접적인 영향력, 협력문화가 업무성과에 미치는 직접적인 영향력, 동기부여가 업무성과에 미치는 직접적인 영향력은 통계적으로 유의한 것으로 나타났다. 또한 구조모형 효과 분해 결과, 동기부여가 업무성과에 직접적으로 미치는 효과는 .175, 동기부여가 협력문화를 매개하여 업무성과에 미치는 간접적 효과는 .163, 동기부여가 업무성과에 미치는 총효과는 .338로 나타났다. 이상의 분석 결과를 토대로 동기부여는 업무성과를 향상시키는 핵심 전략이고, 동기부여를 통해 업무성과를 지속적으로 향상하기 위해서는 바람직한 협력문화의 형성과 운영이 필요함을 논의하였다. The purpose of this study is to analyze the structural relationships between motivation, job performance, and collaborative culture within local education administration informationization organizations. To achieve this, a perception survey targeting employees responsible for local education administration informationization tasks was administered, and structural equation modeling was employed for analysis. The results of the analysis indicate statistically significant direct effects of motivation on collaborative culture, collaborative culture on job performance, and motivation on job performance. Additionally, the decomposition of the structural model effects revealed several key findings: a direct effect of motivation on job performance at .175, an indirect effect of motivation on job performance through collaborative culture mediation at .163, and a total effect of motivation on job performance at .338. Based on these findings, motivation emerges as a key strategy for enhancing job performance, emphasizing the importance of fostering and maintaining a conducive, collaborative culture to continually improve job performance through motivation.

64MB DRAM 선폭 구현을 위한 Half-Tone Type 위상 변이 매스크

오혜근 한양대학교 공학기술연구소 1993 공학기술논문집 Vol.2 No.1

Various methods of lithography are developed for pattern delineation of ultra large scale integrated circuits. Among them, i-line + half-tone type phase shifting mask is the leading candidate for 67MB dynamic random access memory. Optical resolution limit and process lattitude are examined by aerial image and developed resist profile study. The contrast of aerial image shows that the optimum transmittance of half-tone chrome is about 6%. The resist profile study gives about 1.2㎛ depth of focus for 0.35㎛ patterns. The simulation shows half-tone mask is suitable method for 0.35㎛ patterns with enough depth of focus.

외음부에 발생한 혈관근육섬유아세포종 1례

오혜근,구자봉,김동출,심재영,박정훈,박영균,임성철 조선대학교 2003 The Medical Journal of Chosun University Vol.28 No.1

We present a case of angiomyofibroblastoma of the vulva in a 32-year-old woman. The asymptomatic lesion measured 4×3cm and appeared as a gray-white myxoid mass on cut sections Histologically, it appeared as a relatively well-circumscribed spindle cell proliferation with alternating hypercellular and hypocellular areas and proliferation of thin-walled blood vessels. Immunohistochemically, the stromal cells expressed vimentin, CD34 and progesterone receptor, but not desmin, α-smooth muscle actin, S-100 protein and estrogen receptor. These features were similar to those of angiomyofibroblastoma as previously reported in the vulva except negativity for desmin A case of pathologically proven very rare tumor of angiomyofibroblastoma of the vulva is presented with a literature review

난소의 원발성 평활근종 - 1예 보고 -

오혜근,이윤경,임성철 대한병리학회 2002 Journal of Pathology and Translational Medicine Vol.36 No.1

We present a case of ovarian leiomyoma without related clinical symptoms in a 68-year-old woman. Leiomyoma arising primarily in the ovary is rare. However, it is believed that there are actually more cases than those reported because this condition is usually mistaken for a fibrothecoma or parasitic leiomyoma. Most cases previously reported were incidentally presented and coexisted with other ovarian lesions. The present case was characterized by a 9cm, round lobulated mass that totally replaced the left ovary without uterine leiomyoma or coexisting ovarian lesions.

100 nm광 리소그래피 기술

오혜근,O, Hye-Geun 한국광학회 1998 광학과 기술 Vol.2 No.1

선천성 치은종 -2예 보고-

오혜근,서재홍 대한병리학회 2003 Journal of Pathology and Translational Medicine Vol.37 No.5

We present two cases of congenital epulis in female newborns. Congenital epulis is a very rare lesion of uncertain histogenesis. The present lesions were located on the gingiva of the anterior alveolar ridge of the maxilla and the mandible, respectively. Both tumors consisted mainly of large eosinophilic granular cells arranged in solid nests. The neoplastic granular cells showed positive reactions for neuron specific enolase and vimentin in their cytoplasms, while they were entirely negative for other antibodies used in this study.

Process Study of a 200 nm Laser Pattern Generator

오혜근 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6

An overview of resist and process development for use as the next laser pattern generation tool, which will use an approximately 200 nm laser, is presented. Some mask specific issues must be overcome if a 200 nm laser pattern generator is to be used rather than relatively well-known 193 nm wafer process. Post coating and post exposure delay are the main issues that should be taken care of before using a 200 nm laser pattern generator. The limits and possible uses of a 200 nm laser pattern generator are discussed. Among the possible 200 nm light sources, a 198 nm continuous wave laser was recently chosen as the light source. This wavelength is a little bit larger than 193 nm, so some resolution might be lost in terms of aerial image, but the transmittance at 198 nm is larger than that at 193 nm. This allows for a larger side wall angle and a larger process latitude in the resist process. Overall, the target resolution of a 70 nm node can be easily obtained with a 200 nm laser pattern generator.

극자외선 리소그래피용 펠리클

오혜근,O, Hye-Geun 한국광학회 2014 광학과 기술 Vol.18 No.3

193 nm 용 화학 증폭형 감광제 시뮬레이션을 위한 노광 후 지연 효과에 대한 연구

이영미,오혜근 한양대학교 이학기술연구소 2001 이학기술연구지 Vol.3 No.-

The deprotection of 193 run chemically amplified resist is amplified by photo-generated acid during post exposure bake. The acid concentration is changed through reactions such as diffusion, evaporation and acid neutralization with atmospheric base contaminations during post exposure delay. Since the acid concentration greatly affects the final critical dimension, it is very important to control post exposure delay time. In this paper the characteristics of the post exposure delay effect on photoresist profiles was studied. We measured the transmittance and thickness change of the 193 run chemically amplified resist with respect to post exposure delay time. From this result the imaginary refractive index change with post exposure delay time was also obtained. This post exposure delay effect was included in our simulator, LUV (Lithography for Ultra-Violet), and the resulting resist profiles were obtained. 193 nm 용 화학 증폭형 감광제(Chemically Amplified Resist)는 노광(Exposure)을 하면 PAG(Photo Acid Generator)에 의해 산이 생성되고 노광 후 열처리 (Post Exposure Bake) 동안 비보호 (deprotection)반응이 일어나게 된다. 그런데 빛에 의해 만들어진 산은 노광을 하고 노광 후 열처리를 하기까지의 지연 시간 동안 확산, 증발, 그리고 대기중 염기와의 중화반응 등에 의해 농도가 변할 수 있다. 노광과 노광 후 열처리뿐만 아니라 노광 후 지연 (Post Exposure Delay)에 의해 변한 산의 농도가 현상 후 최종 선폭에 막대한 영향을 끼치게 된다. 따라서 본 논문에서는 노광 후 지연 시간에 따른 193 nm 용 양성 화학 증폭형 감광제의 투과율과 두께 변화를 측정하여 노광 후 지연 시간에 따른 하수 굴절률을 얻었고, 그 결과를 노광 후 열처리시 비보호 고분자 영역의 농도와 관련시켜 선폭에 미치는 영향을 연구하였으며 자체 제작한 시뮬레이터 LUV(Lithography for Ultra-Violet)에 적용하였다.

Impact of Polarization Inside a Resist for ArF Immersion Lithography

김상곤,오혜근,정영대,안일신 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.4

Immersion technology with new lens materials and new high-refractive fluids is the key technology to extend the resolution capability of existing 193-nm lithography below the 32-nm pattern formation, but it faces more pronounced polarization and reflection control issues. In this paper, for a wet system, the propagations of the transverse electric (TE) and the transverse magnetic (TM) waves inside a one-layer resist and a multi-layer resist are described by using the finite-difference-time-domain (FDTD) method with a multi-layer model and a transfer-matrix model, respectively. In the comparison with a dry system, the TE and the TM modes of the wet system are larger than those of the dry system. Inside the multi-layer resist, the TM and the TE modes change little at incident angle below . However, for a 45-nm pattern formation, no difference between the TM and the TE modes is found under the given conditions for incident angles below .