http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
CD 스터드 용접의 해석 및 결함 분석 Part 2 : 기공 제어
오현석,유중돈,Oh Hyun-Seok,Yoo Choong-D. 대한용접접합학회 2006 대한용접·접합학회지 Vol.24 No.3
Since the voids occur at the CD stud welds, the mechanism of void formation and void reduction method are investigated in this work. It is speculated that the voids are formed because of high short-circuit current above 1000A. When the simple flow model is used to estimate the void trapping condition, the most voids are trapped at the weld mainly due to fast cooling rate of the CD stud weld. Since it is almost impossible to remove the voids completely, a method is proposed to reduce the void by decreasing the short-circuit current at the end of the arcing time. The experimental results show that the void is reduced by decreasing the short-circuit current to 1000A.
CD 스터드 용접의 해석 및 결함 분석 Part 1 : 공정 모델링과 해석
오현석,유중돈,Oh Hyun-Seok,Yoo Choong-D. 대한용접접합학회 2006 대한용접·접합학회지 Vol.24 No.3
The CD (Capacitor Discharge) stud welding utilizes the arc heat and pressure to attach the stud to the workpiece, which consists of the arc. ignition, arcing and pressure welding stages. In order to predict the dynamic behavior of the CD stud welding process, mechanical and electrical models are employed in this work. While the mechanical model estimates the duration of each stage, the electrical model predicts the voltage and current waveforms using the RLC circuit. Effects of process parameters such as the electric components and spring force are analyzed through simulation. It is found that the contact resistance and gap between the stud and base metal influence the tip fusing and arcing duration. The calculated results showed reasonably good agreements with the experiment results.
오현석,이준웅,Oh, Hyun-Seok,Lee, Joon-Ung 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12
Photovoltaic effects in organic solar cell were studied in a cell configuration of ITO/PEDOT:PSS/CuPc(20 nm)/$C_{60}$(40 nm)/BCP/Al(150 nm) at room temperature. Here, the BCP layer works as an exciton blocking layer. The exciton blocking layer must transport electrons from the acceptor layer to the metal cathode with minimal increase in the total cell series resistance and should absorb damage during cathode deposition. Therefore, a proper thickness of the exciton blocking layer is required for an optimized photovoltaic cell. Several thicknesses of BCP were made between $C_{60}$ and Al. And we obtained characteristic parameters such as short-circuit current, open-circuit voltage, and power conversion efficiency of the device under the illumination of AM 1.5.
전파 망원경 수신기 전단부용 극저온 22 GHz 대역 저잡음 증폭기 모듈 설계 및 제작
오현석,이경임,양승식,염경환,제도흥,한석태,Oh Hyun-Seok,Lee Kyung-Im,Yang Seong-Sik,Yeom Kyung-Whan,Je Do-Heung,Han Seog-Tae 한국전자파학회 2006 한국전자파학회논문지 Vol.17 No.3
본 논문에서는 pHEMT(pseudo-morphic High Electron Mobility Transistor)로 구성된 저잡음 증폭기 MMIC(Monolithic Microwave Integrated Circuit)를 이용하여 극저온에서 동작하는 전파 망원경 수신기 전단부용 22 GH2 대역 저잡음 증폭기 모듈을 설계, 제작하였다. pHEMT MMIC 선정에는, 극저온에서의 동작이 입증된 pHEMT 공정을 사용하여 제작된 저잡음 증폭기 MMIC를 선택하였다. 선정된 2개의 MMIC는 박막(thin film) 세라믹 기판에 장착하여 모듈화 하였다. 모듈화 시 하우징(housing)과 캐리어(carrier) 사이의 간극을 제거하고 전파 흡수체를 사용하여 불필요한 구조에 의한 발진을 제거하였다. 또한 커넥터와 기판 사이의 부정합으로 나타나는 잡음 및 이득의 열화를 리본 조정을 통해 개선시켜 상온에서 최적의 성능을 가지도록 했다. 제작된 증폭기 모듈은 상온에서 $21.5{\sim}23.5GHz$ 대역 내 이득 $35dB{\pm}1dB$, 잡음지수 $2.37{\sim}2.57dB$를 보였다. 제작된 증폭기는 헬륨 냉각기를 이용하여 $15^{\circ}K$로 냉각 후 측정 결과, 대역 내에서 이득 35 dB 이상, 잡음온도 $28{\sim}37^{\circ}K$를 얻었다. In this paper, the cryogenically cooled low noise amplifier module for radio telescope receiver front-end using pHE-MT MMIC is designed and fabricated. In the selection of MMIC, the MMIC fabricated with the pHEMTS providing successful cryogenic operation are chosen. They are mounted in the housing using the thin film substrate. In the design of the housing, the absorber and the elimination of the gap between the carrier and the housing as well removed the unnecessary oscillations by its structure. The mismatch is improved by ribbon-tuning to provide the best performance at room temperature. The fabricated module shows the gain of $35dB{\pm}1dB$ and the noise figure of $2.37{\sim}2.57dB$ at room temperature over $21.5{\sim}23.5GHz$. In the cryogenic temperature of $15^{\circ}K$ cooled by He gas, the measured gain was above 35 dB and flatness ${\pm}2dB$ and the noise temperatures of $28{\sim}37^{\circ}K$.
최근 국내 분리 고병원성 infectious bursal disease virus의 segment A 유전자 특성
오현석,이진화,권혁무,성환우,Oh, Hyun Seok,Lee, Jin Hwa,Kwon, Hyuk Moo,Sung, Haan Woo 대한수의학회 2011 大韓獸醫學會誌 Vol.51 No.1
Infectious bursal disease virus (IBDV) is a member of the Avibirnavirus genus of the Birnaviridae family which genome consists of two segments (A and B) of double stranded RNA. Segment A gene of KNU08010 isolate, which was isolated from a 15-day-old chicken flock in 2008, was sequenced and compared with other IBDV isolates including SH/92 strain, the first Korean very virulent (vv) IBDV isolate. The amino acid sequences of segment A gene showed that KNU08010 had 99.2% homology with SH92 strain. KNU08010 isolate had specific amino acids A222, I242, I256, I294 and S299 which are highly conserved among vvIBDV strains. Phylogenetic analysis based on the nucleotide sequences of variable region of the VP2 gene of 18 IBDV strains revealed that KNU08010 was grouped with vvIBDVs and was closely related to Korean vvIBDVs isolated from wild birds.
짧은 천이길이를 갖는 Ku-대역 감소단축도파관 대 마이크로스트립 모드 변환기
오현석(Hyun-Seok Oh),염경환(Kyung-Whan Yeom) 한국전자파학회 2008 한국전자파학회논문지 Vol.19 No.12
본 논문에서는 짧은 천이길이를 갖는 감소단축도파관(reduced-height waveguide) 대 마이크로스트립 모드 변환기(mode converter)를 설계하였다. 모드 변환기는 E-평면 프로브를 이용한 모드 변환기와 변형된 임피던스 변환기로 구성되어진다. E-평면 프로브를 이용한 모드 변환기는 50 ohm 릿지(ridge) 도파관의 릿지 상단에 단락된 프로브를 이용하여 설계하였다. 이 모드 변환기에 이용된 50 ohm 릿지 도파관과 감소단축도파관을 연결하기 위해 변형된 임피던스 변환기를 설계하였다. 이와 같이 구성된 전체 모드 변환기의 대역을 넓히기 위해, 두 구조의 결합도를 조정하였다. 저손실 및 Ku-대역 전체에서 동작하도록 구조를 최적화한 후 모드 변환기를 제작하였다. 제작된 2개의 모드 변환기를 직접 연결(thru)한 S-파라미터와 모드 변환기 사이에 라인(line) 도파관을 삽입한후 S-파라미터를 측정하였다. 측정된 2개의 S-파라미터를 이용하여 단일 모드 변환기의 성능을 추출하였다. 이렇게 추출된 모드 변환기의 성능은 커넥터 손실을 포함하고 있어, 커넥터 손실을 측정하여 보상하였다. 모드 변환기는 직각구조로 7.2 ㎜의 천이길이를 가지며, 중심 주파수에서 0.12 ㏈ 삽입 손실과 Ku 전대역에서 10 ㏈ 이상의 반사 손실을 갖는 우수한 특성을 보였다. In this paper, we designed a reduced height waveguide(WG) to microstrip mode converter with a short transition length. The mode converter is composed of a mode converter using E-plane probe and a modified impedance transformer. The mode converter was designed using a probe shorted to top of a 50 ohm ridge WG. The modified impedance transformer was designed to connect the mode converter to the reduced height WG. For wide bandwidth operation, the coupling of the two parts was tuned. The structure of the mode converter was optimized for low loss and wide bandwidth, and the optimized mode converter was fabricated. The performance of the mode converter was extracted using the thru and line S-parameters for back-to-back connections, and the connector loss was calibrated. The mode converter has a right angle structure and short transition length, 7.2 ㎜. The mode converter shows excellent performances; the insertion loss of 0.12 ㏈ at 15 ㎓, and the return loss above 10 ㏈ for the full Ku-band.