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여종빈,이현용,Sang-Don Yun 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.2
We report both the influence of substrate and structure on Ag-photodoping into an amorphous (a-) GeSe thin film by using holographic exposure and the measurement of the diffraction efficiency (η) in real time. The films (Ag and a-GeSe) were thermally deposited on three substrates: p-type Si (100), n-type Si (100), and slide glass. Two types of sample structures were prepared: I (Ag/a-SeGe/substrate) and II (a-SeGe/Ag/substrate). The η-kinetics of types I and II were very different from each other and depended strongly on the substrate. The ηM values of type II were higher than those of type I. In addition, type II exhibited the highest ηM for the p-type Si substrate while type I did likewise for the n-type Si substrate. We propose two suggestions to explain these dependences. (1) The substrate dependence for Ag photodoping is explained by the diffusion of minority carriers in the films and by the changes of in the magnitude and the direction of the internal fields generated at the film interfaces. (2) The initial first stage observed in the kinetics of type II plays an important role in the Ag photodoping and is explained by the photodarkening-dominant process related to the generation of valence-alternation pairs (VAPs) in the chalcogenide. In particular, we believe that the existence of this darkening-dominant region is the primary factor explaining the increase of η (i.e.}, the enhancement of Ag photodoping). Relief-gratings (period ~ 1.6 mm, filling factor ~0.5) were fabricated on an a-GeSe/Ag/p-Si substrate by using holographic exposure and wet-etching development.
여종빈,윤상돈,이현용,Yeo, Jong-Bin,Yun, Sang-Don,Lee, Hyun-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.8
Two dimensional photonic crystals (2D PCs) have been fabricated by a double exposure holographic method using a He-Cd laser with a wavelength of 442nm. The arrays of the 2D PCs exhibit variable lattice structures from square to triangle according to a change of rotating angle $({\gamma})$ for double exposure beams. In addition, the period and filling factor of PCs as well as the forms (dot or antidot) could be controlled by experimental conditions. $A l.18-{\mu}m-thick$ resist was spin-coated on Si substrate and the 1st holographic exposure was carried out at incident angle $({\theta})$ of $11^{\circ}$. Then the sample was rotated to ${\gamma}=45^{\circ}{\sim}90^{\circ}$ and the 2nd holographic process was performed at ${\theta}=11^{\circ}$. The variation of diffraction efficiency during the exposure process was observed using a He-Ne laser in real time. The images of 2D PCs prepared were analyzed by SEM and AFM. We believe that the double holographic method is a tool suitable to realize the 2D PCs with a periodic array of large area.
비정질 GeSe 박막으로의 은-광도핑에 대한 기판의존성
여종빈,윤상돈,이현용,Yeo, Jong-Bin,Yun, Sang-Don,Lee, Hyun-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.10
The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.
COVID-19의 UV 살균을 위한 비주기 다중층막 광학필터 구조의 설계
여종빈 한국마이크로전자및패키징학회 2022 마이크로전자 및 패키징학회지 Vol.29 No.1
In the present work, we have designed to optimize the optical filter structures of the 1-dimensional photonic quasicrystals (1D PQCs) characteristic for the COVID-19 UV sterilization. The simulator using MATLAB program and ourselves manufacturing calculation codes. After making the aperiodic (and complexed) multi-layer structure model, we establish the transfer matrix method (TMM) for model by the operator conversion. By the using the MATLAB, we derive a matrix for the designed complexed multi-layer structure by applying the equations to the model by obtaining the reflectance and transmittance from the matrix. We also prove the possibility of application in optical filter for UV sterilization. 본 연구는 최근 유행하고 있는 코로나 바이러스(SARS-CoV-2) UV 살균을 위한 1차원 광자 준결정 구조 개념의 광학 필터를 설계하고 시뮬레이션 하였다. 시뮬레이터는 수치해석 프로그램으로 사용되는 MATLAB 프로그램과 직접 코딩한 연산수식을 사용하였다. 비주기(복합구조) 다중층 구조 모델을 설계한 후, 특성 계산을 위하여 다중층 구조 모델의 물성치를 천이 행렬법(TMM, Transfer Matrix Method)으로 설정하였다. 설계된 복합 다중층 구조의 MATLAB을 활용한 전산모사법을 통하여 얻은 행렬값으로부터 반사도와 투과도를 계산하였다. 이 연구의 결과로 인체에 무해하면서 코로나 바이러스 UV 살균이 가능한 253.7 nm 파장만을 투과하는 광학 필터의 제작 및 응용 가능성을 증명하였다.
다중노광 나노구 리소그라피를 이용한 쌍-광자결정 어레이 제작
여종빈,한광민,이현용,Yeo, Jong-Bin,Han, Gwang-Min,Lee, Hyun-Yong 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.3
Two dimensional(2D) pair-photonic crystals (pair-PCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns and the collimated laser beam as a multiple-exposing source. The arrays of the 2D pair-PCs exhibited variable lattice structures and shape the control of rotating angle (${\Theta}$), tilting angle (${\gamma}$) and the exposure conditions. In addition, the base period or filling factor of pair-PCs as well as their shapes could be changed by experimental conditions and nanosphere size. A 1.18-${\mu}m$-thick resist was spincoated on Si substrate and the multiple exposure was carried out at change of ${\gamma}$ and ${\Theta}$. Images of prepared 2D pair-PCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the pair-periodic arrays of large area.
FDTD 시뮬레이션을 이용한 정방형 2차원 광자결정에서의 광자 밴드갭 특성
여종빈,양회영,이현용,Yeo, Jong-Bin,Yang, Hoe-Young,Lee, Hyun-Yong 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
Characteristics of the photonic bandgaps (PEGs) in two-dimensional photonic crystals (2D PCs) with a square lattice have theoretically studied using a finite difference time domain (FDTD) simulation. In this paper, we propose a concept of optical coverage ratio (OCR) as a new structural parameter to determine the PEGs for E-polarized light. The OCR is an optically compensated filling factor. It is possible to normalize the PEGs of 2D PCs by introducing the OCR.
전기탈이온시스템 응용을 위한 주기적 홀을 갖는 금속 전극 제작에 관한 연구
여종빈,선상욱,이현용,Yeo, Jong-Bin,Sun, Sang-Wook,Lee, Hyun-Yong 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.3
Electrodeionization is a hybrid separation process of electrodialysis and ion exchange to produce high purity water under electric field. This article provides a fabrication result of hole patterned metal electrode for elecrodeionization system. The hole patterns have been fabricated by nanosphere lithography (NSL). The technique utilizes the self-assembled nanospheres as lens-mask patterns and collimated laser beam source. The hole patterns have a periodic array structure. The images of hole pattern on metal electrode prepared were observed by SEM. We believe that the periodic hole patterned metal electrode structure is a useful device applicable for metal mat electrode in electrodeionization system.
비정질-결정질 가역적 상변환 소자용 Ge<sub>8</sub>Sb<sub>2</sub>Te<sub>11</sub> 박막의 W 도핑에 따른 상변환 특성 평가
박철진,여종빈,공헌,이현용,Park, Cheol-Jin,Yeo, Jong-Bin,Kong, Heon,Lee, Hyun-Yong 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.3
We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.
GeSbSe계 기반 8~12 ㎛ 파장대역 적외선 광학 렌즈 제작 및 비구면 렌즈 가공기술 개발
배동식,여종빈,한상현,이현용,Bae, Dong-Sik,Yeo, Jong-Bin,Han, Sang-Hyun,Lee, Hyun-Yong 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.3
The chalcogenide glass has superior optical properties in IR region transmittances. We have determined the composition of GeSbSe chalcogenide glass for the application of good IR lenses, resulting in the composite rate of $Ge_{19}Sb_{23}Se_{58}$. The optical, structural, thermal and physical properties were measured by Fourier transform infrared spectroscopy (FT-IR), X-ray diffraction (XRD), Differential scanning calorimeter (DSC), X-ray computed tomography (X-ray CT) respectively. The fabrication of the chalcogenide glass lens for infrared optics applications was proposed using a diamond turning machining technology which is known as the suitable ways for the production cost reduction and the accurate fabrication process control.