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이형주,장인규,안원찬,곽이구,김홍건,곽준섭 한국물리학회 2017 Current Applied Physics Vol.17 No.12
Various GaxIn1-xP strain barriers were evaluated for their ability to compensate for the strain of lattice mismatched InGaAs/GaAs MQWs structures. A GaxIn1-xP (c ¼ 0.53) tensile strain barrier, which was inserted between the n-confinement and InGaAs/GaAs multi-quantum well (MQW) active region, was effective in reducing the compressive strain caused by In0.07GaAs in multiple quantum wells (MQWs). Importantly, a remarkably enhanced PL intensity was obtained by retuning the strain of In0.07GaAs QWs based on a Ga0.53InP tensile strain barrier. A fabricated IR-LED chip, having retuned In0.08GaAs/GaAs MQWs with a Ga0.53InP tensile strain barrier, yielded double the light output power of the IR-LED chip without a Ga0.53InP strain barrier. This suggests that the use of a Ga0.53InP tensile strain barrier is essential for compensating for the compressive strain of lattice-mismatched InGaAs/GaAs MQWs with a 940 nm emitting wavelength, followed by the improved output power of the IR-LED chips.
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김대광,이형주,안원찬,김홍건,곽이구 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.9
The effect of laminar flow fluctuation on the indium composition of In0.07GaAs quantum wells was investigated in order to obtain a higher output power from infrared lighting-emitting diodes (IR-LEDs) having a 940-nm wavelength. By controlling the injection pressure, we obtained various laminar flow conditions. Through subsequent photoluminescence (PL) and X-ray diffraction (XRD) measurements, a noticeable improvement in the optical and the crystalline characteristics of the In0.07GaAs quantum wells was observed at an optimum laminar flow. This result could be attributed to a reduction of non-crystallization in InGaAs quantum wells that had their indium composition improved via the optimized laminar flow. Overall, a significantly improved output power (11.2 mW) was obtained from a 940-nm IR-LED chip fabricated at an optimum laminar flow of 500 sccm, and a remarkable increase of approximately 250% was displayed compared to a conventional chip (3.9 mW) fabricated at a laminar flow of 100 sccm.
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이형주,소진수,김홍근,Lee-Ku Kwac,안원찬 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.1
The use of an Al$_x$Ga$_{1-x}$As bound Ga$_z$In$_{1-z}$P strain compensation structure for optimum strain in latticed mismatched In$_{0.07}$GaAs/GaAsP$_{0.06}$ multiple quantum wells (MQWs) and its effect on the output power of an infrared light-emitting diode at 940-nm were investigated. A Ga$_{0.53}$InP tensile strain structure, which effectively compensate excessive compressive strain in the In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQWs, was inserted between a quantum well and a quantum barrier. The Al$_{0.2}$GaAs material was used as both a growth buffer and a balancing barrier for In$_{0.07}$GaAs/Al$_x$Ga$_{1-x}$As-bound Ga$_{0.53}$InP/GaAsP$_{0.06}$ MQWs. From photoluminescence (PL) measurements and X-ray diffraction (XRD) rocking curves, we verified that the Ga$_{0.53}$InP tensile strain barrier could effectively compensate the compressive strain of the In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQWs. In addition, a further increase in the PL intensity from the In$_{0.07}$GaAs/Al$_y$Ga$_{1-y}$As-bound Ga$_{0.53}$InP/GaAsP$_{0.06}$ MQWs was found after having adjusted the Al$_{0.2}$GaAs strain tuning barrier. This result was significantly supported by the stable balance of the energy bandgap structure in the developed MQWs. From fabricated IR-LEDs chips, the LED with an In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQW employing the Al$_{0.2}$GaAs-bound Ga$_{0.53}$InP strain compensation structure displayed a 48\% higher light output power as compared with a conventional LED. These results suggest that the use of an Al$_{0.2}$GaAs-bound Ga$_{0.53}$InP strain compensation structure effectively improved both the unbalanced strain and the unbalanced energy bandgap of lattice-mismatched In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQWs for 940-nm IR-LEDs.
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