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EPS(elementwise patterned stamp)활용 UV나노임프린트 공정에서의 웨이퍼 미소변형의 영향
심영석(Young-suk Sim),정준호(Jun-ho Jeong),손현기(Hyonkee Sohn),이응숙(Eung-sug Lee),방영매(Lingmei Fang),이상찬(Sang-chan Lee) 한국진공학회(ASCT) 2005 Applied Science and Convergence Technology Vol.14 No.1
본 실험에서는 단위요소 사이에 채널을 갖는 Elementwise Patterned Stamp (이하 EPS)를 이용하여 실글스탬(single step)으로 4인치 웨이퍼를 임프린트 하는 공정을 수행하였다. 단위요소간의 간격이 3㎜인 EPS를 이용한 임프린트에서 50 - 100㎚급의 패턴을 성공적으로 형성하였다. 그러나 임프린트 과정 중 EPS의 채널 부분에서 웨이퍼의 미소변형이 발생하여 단위요소의 미충전과 불균일한 잔여층이 형성되는 문제들이 발생하였다. 본 논문에서는 이러한 웨이퍼의 미소변형이 단위요소 충전과 패턴형성에 미치는 영향을 확인해 보기 위해 웨이퍼의 두께를 100 - 500㎛로 변화시켜가며 임프린트 실험을 수행하였고, 유한요소법(Finite Element Method, FEM)을 이용한 수치모사를 통하여 실험결과를 확인하였다. 또한 웨이퍼의 미소변형이 발생하는 또 다른 요인인 EPS의 채널 폭을 3㎜, 2㎜, 1㎜로 변화시키며 수행한 수치모사를 통하여 안정된 임프린트 조건을 제시하였다. In the UV-NIL process using an elementwise patterned stamp (EPS), which includes channels formed to separate each element with patterns, low-viscosity resin droplets with a nano-liter volume are dispensed on all elements of the EPS. Following pressing of the EPS, the EPS is illuminated with UV-light to cure the resin; and then the EPS is separated from several thin patterned elements on a wafer. Experiment on UV-N1L were performed on an EVG620-NIL. 50 - lOO㎚ features of the EPS with 3㎜ channels were successfully transferred to 4 in. wafers. Especially, the wafer deformation during imprint was analyzed using the finite element method (FEM) in order to study the effect of the wafer deformation on the UV-NIL using EPS.
UV 나노임프린트 리소그래피용 UV 투과성 나노스탬프 제작
정준호(Jun-ho Jeong),심영석(Young-suk Sim),손현기(Hyonkee Sohn),신영재(Young-jae Shin),이응숙(Eung-suk Lee),허익범(Ik-Boum Hur),권성원(Sung-Won Kwon) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.4
Ultraviolet-nanoimprint lithography (UV-NIL) is a promising nanoimprint method for cost-effectively<br/> defining nanometer scale structures at room temperature and low pressure. Nanostamp fabrication technology<br/> is a key technology for UV-NIL because fabricating a high resolution nanostamp is the first step for defining<br/> high resolution nanostructures in a substrate. We used quartz as an UV transparent stamp material for the UVNIL.<br/> A 5×5×0.09 inch stamp was fabricated using the quartz etch process in which Cr film was used as a hard<br/> mask for transferring nanostructures into the quartz. In this paper, we describe the quartz etching process and<br/> discuss the results including SEM images.
다중양각스탬프를 사용하는 UV 나노임프린트 리소그래피공정에서 웨이퍼 미소변형의 영향
정준호(Jun-Ho Jeong),심영석(Young-Suk Sim),최대근(Dae-geun Choi),김기돈(Ki-don Kim),신영재(Young-Jae Shin),이응숙(Eung-Sug Lee),손현기(Hyonkee Sohn),방영매(Lingmei Fang),이상찬(Sang-chan Lee) 한국정밀공학회 2004 한국정밀공학회 학술발표대회 논문집 Vol.2004 No.10월
In the UV-NIL process using an elementwise patterned stamp (EPS), which includes channels formed to separate each element with patterns, low-viscosity resin droplets with a nano-liter volume are dispensed on all elements of the EPS. Following pressing of the EPS, the EPS is illuminated with UV light to cure the resin; and then the EPS is separated from several thin patterned elements on a wafer. Experiments on UV-NIL were performed on an EVG620-NIL. 50 ? 70 ㎚ features of the EPS were successfully transferred to 4 in. wafers. Especially, the wafer deformation during imprint was analyzed using the finite element method (FEM) in order to study the effect of the wafer deformation on the UV-NIL using EPS.
Fabrication of UV imprint stamp using diamond-like carbon coating technology
정준호(JUN-HO JEONG),김기돈(KI-DON KIM),심영석(YOUNG-SUK SIM),최대근(DAE-GEUN CHOI),최준혁(JUNHYUK CHOI),이응숙(EUNG-SUG LEE),임태우(TAE-WOO LIM),박상후(SANG-HU PARK),양동열(DONG-YOL YANG),차남구(NAM-GOO CHA),박진구(JIN-GOO PARK),IN- 한국소성가공학회 2005 한국소성가공학회 학술대회 논문집 Vol.2005 No.10
Fabrication of UV imprint stamp using diamond-like carbon coating technology
EUNG-SUG LEE(이응숙),JUN-HO JEONG(정준호),KI-DON KIM(김기돈),YOUNG-SUK SIM(심영석),DAE-GEUN CHOI(최대근),JUNHYUK CHOI(최준혁),TAE-WOO LIM(임태우),SANG-HU PARK(박상후),DONG-YOL YANG(양동열),NAM-GOO CHA(차남구),IN-KWON KIM(김인권),JIN- 대한기계학회 2005 대한기계학회 춘추학술대회 Vol.2005 No.11
The two-dimensional (2D) and three-dimensional (3D) diamond-like carbon (DLC) stamps for ultraviolet nanoimprint lithography (UV-NIL) were fabricated using two kinds of methods, which were a DLC coating process followed by the focused ion beam (FIB) lithography and the two-photon polymerization (TPP) patterning followed by nano-scale thick DLC coating. We fabricated 70 ㎚ deep lines with a width of 100 ㎚ and 70 ㎚ deep lines with a width of 150 ㎚ on 100 ㎚ thick DLC layers coated on quartz substrates using the FIB lithography. 200 ㎚ wide lines, 3D rings with a diameter of 1.35 ㎛ and a height of 1.97 ㎛, and a 3D cone with a bottom diameter of 2.88 ㎛ and a height of 1.97 ㎛ were successfully fabricated using the TPP patterning and DLC coating process. The wafers were successfully printed on an UV-NIL using the DLC stamp. We could see the excellent correlation between the dimensions of features of stamp and the corresponding imprinted features.