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심관필,안병섭,강예환,홍영성,강이구,Sim, Gwan Pil,Ann, Byoung Sup,Kang, Ye Hwan,Hong, Young Sung,Kang, Ey Goo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.3
Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.
전기자동차 배터리 충전을 위한 DC - DC컨버터용 Super Junction MOSFET 설계에 관한 연구
김범준,홍영성,심관필,강이구,Kim, Bum June,Hong, Young Sung,Sim, Gwan Pil,Kang, Ey Goo 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.8
Release competition and development of eco-friendly vehicles have been conducted violently also automaker, it will be a high growth industry of the charger and battery, which is the driving source of the motor of an electric vehicle. Reduces the on-resistance power elements DC - DC converter for battery charger for electric vehicles, must minimize switching losses. Should have a low on-resistance power than existing products. Compare the Super Junction MOSFET and Planar MOSFET, As a result, super junction MOSFET improve on about 87.4% on-state voltage drop performance than planar MOSFET.