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저온 ICP-CVD 공정으로 제조된 나노급 실리콘 박막의 물성
신운 ( Yun Shen ),심갑섭 ( Gap Seop Sim ),최용윤 ( Yong Yoon Choi ),송오성 ( Oh Sung Song ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.4
100 nm-thick hydrogenated amorphous silicon (α-Si:H) films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to 550℃. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >400℃. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above 400℃ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at 550℃ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.
3중 접합 공정에 의한 MEMS 공진기의 웨이퍼레벨 진공 패키징
양충모 ( Chung Mo Yang ),김희연 ( Hee Yeoun Kim ),박종철 ( Jong Cheol Park ),나예은 ( Ye Eun Na ),김태현 ( Tae Hyun Kim ),노길선 ( Kil Son Noh ),심갑섭 ( Gap Seop Sim ),김기훈 ( Ki Hoon Kim ) 한국센서학회 2020 센서학회지 Vol.29 No.5
The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10<sup>-6</sup> mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.