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RFCVD 장치를 이용하여 성장한 실리콘 나노와이어의 특성
김재훈,이형주,신석승,김기영,고춘수,김현숙,황용규,이충훈,Kim, Jae-Hoon,Lee, Hyung-Joo,Shin, Seok-Seung,Kim, Ki-Young,Go, Chun-Soo,Kim, Hyun-Suk,Hwang, Yong-Gyoo,Lee, Choong-Hun 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.2
We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.