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자동차용 냉매 압축기의 FSI(Fluid-Structure Interaction) 해석
손일국(I.G. Son),배성민(S.M. Pae),김광일(K.I. Kim),윤영섭(Y.S. Yoon) 한국전산유체공학회 2010 한국전산유체공학회 학술대회논문집 Vol.2010 No.5
One of the most effective key factors to improve performance of automotive reciprocating compressor is the design of suction and discharge reed valves. Reed valves are also the major sources of compressor noise. Valve motion is highly coupled with refrigerant flow. In this study, a process of fluid-structure interaction analysis was developed to predict the cylinder inner flow and the dynamic behavior of valve simultaneously. Interface programs were developed for transformation and mapping of data between computational fluid dynamics code and computational structural dynamics code. The full cycle simulations of compressor were performed using FSI analysis. The process of FSI analysis was validated by comparing the simulation results with the experimental results.
인간 신체를 자율적으로 보조하고 보호하는 지능형 소프트 슈트(엑소스킨)
손용기,정준영,진한빛,구자범,김배선,이동우,김혜진,신형철,Son, Y.K.,Jung, J.Y.,Jin, H.B.,Gu, J.B.,Kim, B.S.,Lee, D.W.,Kim, H.J.,Shin, H.C. 한국전자통신연구원 2021 전자통신동향분석 Vol.36 No.1
Innovative developments in wearable and artificial intelligence technologies are accelerating the emergence of a soft suit that can autonomously augment a body's own strength and protect the human body. In this paper, we define the concept of "Exoskin," a new concept specifically derived from the "Road to an Intelligent Information Society" (Technology Development Map 2035) as predicted by the Electronics and Telecommunications Research Institute. In addition, we analyze the development status of each element of this technology and forecast its future development.
UV - excited chlorine radical을 이용한 실리콘 웨이퍼상의 금속 오염물의 건식세정에 관한 연구
손동수(D. S. Son),황병철(B. C. Hwang),조동율(T. Y. Cho),천희곤(H. G. Chun),김경중(K. J. Kim),문대원(D. W. Moon),구경완(K. W. Koo) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.1
본 연구에서는 실리콘 웨이퍼 표면에 존재하는 미량의 Zn, Fe, Ti 금속 오염물들이 UV-excited chlorine radical을 이용한 건식세정 방법으로 제거되는 반응과정을 찾아내고자 하였다. 실리콘 웨이퍼 상에 진공증착법으로 원형패턴이 있는 Zn, Fe, Ti 박막을 증착시켜 상온 및 200℃에서 UV/Cl₂ 세정하였을 때, 염소 래디컬 (Cl*)이 Fe, Zn, Ti와 반응하여 제거되는 것을 반응 전후 광학현미경과 SEM을 통해 표면 형상 변화을 관찰하였고, in-line으로 연결된 XPS를 통해서 반응 후 웨이퍼 표면에 남아있는 화합물의 화학적 결합상태를 관찰하였으며, UV/Cl₂ 세정 후 실리콘 기판이 손상받는 정도를 알기 위해 AFM으로 표면 거칠기를 측정하였다. 광학현미경과 SEM의 분석 결과에 의하면 Zn와 Fe는 쉽게 제기되는 반면 염화물을 형성하기 보다는 휘발성이 적은 산화물을 형성하는 경향이 강한 Ti은 약간만 제거되는 것을 확인하였다. XPS 분석을 통해서 이들 금속 오염물들이 chlorine radical과 반응하여 웨이퍼 표면에 금속 염화물을 형성하고 있는 것을 확인하였고, UV/Cl₂ 세정처리를 하였을 때 실리콘 웨이퍼의 표면 거칠기가 약간 증가하는 것을 알 수 있었다. 지금까지의 결과를 통해 볼 때, 습식세정과 UV/Cl₂ 건식세정을 병행하면 플라즈마 및 레이저를 사용하는 다른 건식세정 방법에 비하여 보다 저온에서 실리콘 기판의 큰 손상 없이 비교적 용이하게 금속 오염물을 제거할 수 있음을 제안하였다. The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with Cl₂ and UV/Cl₂ at 200℃ were studied by optical mocroscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/Cl₂ at elevated temperature of 200℃. It was also found that the surface roughness of the Si wafer increased after Cl₂ and UV/Cl₂ cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/Cl₂ dry cleaning.