Ta₂O5 / Al / SiO₂ / P-Si MIS型 太陽電池의 製作과 特性

노경석(Noh Kyung Suk),손연규(Sohn Yeon Kyu) 한국태양에너지학회 1986 한국태양에너지학회 논문집 Vol.6 No.2

CVD方法에 의한 SnO₂/ n-Si 太陽電池의 製作

노경석(Kyung-Suk Noh),손연규(Yeon-Kyu Sohn),이동헌(Dong-Heon Lee) 한국태양에너지학회 1988 한국태양에너지학회 논문집 Vol.8 No.2

결정경계에서의 EL현상

손연규 安東大學 1998 安東大學 論文集 Vol.20 No.1

The phenomena reserved for discussion in EL at crystal boundaries are those in which the essential function of boundaries has been extensively studied and demonstrated in a conclusive way. The classification is made for the sake of presentational convenience only. It is not itself intended to imply that the mechanisms which are effective in the materials discussed elsewhere are necessarily and irreconcilably different.

X-線 源으로서의 HCP와 DPF裝置의 特性

손연규 安東大學 1989 安東大學 論文集 Vol.11 No.1

x-ray sources for lithography have traditionally generated soft x-ray by electron bombardment of solid surface. It`s conversion efficiency of electrical energy to radiaton is less than 0.1% in the soft x-ray range. Thus, high electrical power is required for practical x-ray fluxes. The power input is limited by heating of the anode, which ultimately melts or deforms. Even with cooling, by nucleate boiling through high velocity turbulent water flow, conventional x-ray tubes are limited to about 5Kw of electrical power for a 3mm diameter spot. High brightness x-ray sources is storage ring, electron beams, laser focus, sliding spark, gas puff z-pinch, dense plasma focus (DPF) and hypocycloidal pinch (HCP) etc. Among these, DPF and HCP devices characteristics is a good candidates for a source of high throughput, high resolution x-ray lithography (XRL) and pulsed nature of the sources further enhance the prospect of XRL. DPF has been studied for the soft x-ray lithography and other strong light sources since early 1980`s. In this paper, the principle of the DPF and HCP devices as a soft x-ray sources, emission mechanism of DPF and HCP plasma, principle of x-ray absorption and electrical circuit characteristics are discussed.

Production of Dense Plasma Foci in Hypocycloidal-Pinch as a Soft X-Ray Source

손연규 안동대학교 기초과학연구소 1991 基礎科學 硏究論文集 Vol.2 No.1

고출력 HCP장치는 단반형 전극으로 되어 있으며 고정밀 사진식각용 광원인 연 X-선을 발생시킬 수 있음이 연구되고 있는바, 고밀 plasma 초점은 압축되고 가숙된 plasma에서 생성되는 전류 sheaths와 sheets에 의해 형성된다. 초점이 형성될 때의 plasma밀도는 10(18)el/㎤이상이며 온도는 1KeV정도가 되는바, 이때에 밝고 해상력이 좋은 X-선이 발생된다. A new type of high-power hypocycloidal pinch (HCP) apparatus consisting of disk electrodes was investigated as a possible soft-x-ray source for a submicron lithography. Dense plasma foci are produced on the axis by collapse of the current sheets which compress and heat the plasma. The density and the temperature of the plasma reach Ne>10^(18)/㎤ and Te~lKeV when the energy of 20KJ is applied on the HCP device.

螢光物體의 電場發光 特性

손연규 安東大學 1991 安東大學 論文集 Vol.13 No.1

The study of electroluminescence has been begun that the two germans, B. Gudden and R.W. Pohl in 1920 examined the remaining light by dint of adding electric field at the fluorescent substance and from 1952 the study became brisk, in 1960 made a peak and afterward it was diminished. In this paper, I am going to investigate voltage, frequency, and temperature depence of the EL-phosphors, and that introduce the brightness waves, spectral composition, effect of radiation on electroluminescence and EL-phenomena in various materials (SiC, 3-5 compounds, diamond, Ba, Sr, Cu_(2)O, organic compound etc.)

Snow Plow Model and Plasma Source in a HCP Device

손연규 안동대학교 기초과학연구소 1997 基礎科學 硏究論文集 Vol.8 No.1

The initial condition of the system have the following relation with the speed V, of the current sheet: (1) The radial speed of the cur rent shell varies with gas density as V_(r) ∝ ρ^(-0.25) Since ρ is proportional to the pressure of the gas P, V_(r) ∝ P^(-0.25)

99년도 안동지방 환경방사능 측정 및 분석

손연규 안동대학교 기초과학연구소 2000 基礎科學 硏究論文集 Vol.11 No.1

The objectives of the project are to monitor an abnormal level in Andong area and to provide a base-line data on enviromental radiation/radioactivity levels in case of any radiological emergency situation. The project is important in view of protecting the public health from the potential hazards of radiation and keeping up the clean environment. This report summarizes and interprets environmental radiation/radioactivity monitoring samples : Gamma exposure rates, airborne dust, precipitation, fall-out and drinking-water. Enviromental sample : grain products, pulses, vegetables, milk products, fishes/shellfish, eggs products meat products and seaweeds. Among the all 1999 radiological monitoring and environmental datas in Andong area were not found the extraordinary datas. And a nation-wide environmental radiation/radioactivity level survey results were all background levels attributed to terrestrial and cosmic radiation.

安東多目的댐의 機能과 役割

孫鍊圭,尹志洪 安東大學附設 安東文化硏究所 1989 安東文化 Vol.10 No.-

Andong Dam has a wonderful functions. That is flood control. electric power production, irrigation water, living water, industrial water, shipping transportation, sightseeing tourist facilities, fish conservation, quicksand control, and control of the sea water invasion. Among these, function of flood control is 110×10 exp (6) ㎥/year, Supply service of living and industrial water is 450×10 exp (6) ㎥/year and Electric power service is 158×10 exp (6) kwh/year. But after construction Andong Dam. It is difficult problems in this area that ecological adaption, meteological phenomenon, influence of farm productions and human bodies.

西紀 2000年代를 向한 半導體 電子生産技術을 爲한 X-線 寫眞蝕刻

손연규 安東大學 1987 安東大學 論文集 Vol.9 No.1

Advances in X-ray lithography technology are occurring at a promising rate. Impressive progress has been made in the development of high-intensity sources, mask membrance and patterning technology, precision mask-to-wafer alignment, and faster, high-resolution X-ray resists. The concept of using this inherently low defect lithographic technique for manufacturing submicron integrated circuits by 1985 and beyond, is realistic. Current X-ray Lithographic research systems replicate integrated circuit patterns on a full wafer with a single exposure, but step-arid-repeat exposure systems are being developed for more advanced submicron applications. Both system types are discussed, and performance trade analyses are presented to show the relative merits of each approach. Very Large Scale Integrated (VLSI) circuit patterning using X-ray Lithography will come of age in the decade of the 2000s. Critical technology associated with mask membrance patterning, precision mask-to-wafer alignment, high-intensity sources, and fast high-resolution resists is being addressed, understood and solved on an industry-wide basis. This high level of progress should continue throughout the decade. Prototype X-ray equipment is expected to be on the market by 1983~85 that will provide a limited production capability to meet early knowledge-building needs for submicron device fabrication and will expose either 75 or 100mm diameter wafers. As integrated circuit (IC) performance requirments are tightened in areas of resolution (0.5 micron or smaller, minimum features) and overlay accuracy (0.1~0.2 micron), the need for more advanced equipment will become necessary. X-ray step-and-repeat equipment is expected to fill this role. The transition from full field to subfield equipment will most likely occur in the mid-1980s. By the end of the decade X-ray lithographic equipment will be at hand for submicron VLSI device replication at increasingly higher volumes.