http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
세경 강,이상준,김문덕,노삼규,최정우 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.1
We report some electronic characteristics of a couple of self-assembled InAs/GaAs quantum-dot (QD) heterostructures with sizes of 1.8 and 2.0 monolayers (MLs) fabricated by using the molecular beam epitaxial technique via the Stranski-Krastanow growth mode. Optical analysis of the farinfrared absorption spectra and the near-infrared photoluminescence (PL) emission spectra taken at room temperature has been made in order to determine the energy positions of the sublevels in the QD ensemble. The absorption peak energies (wavelengths) are identied as 90 meV (13.8 m) and 110 meV (11.3 m), and the PL emission peak energies are 1.202 eV and 1.169 eV for 1.8-ML and 2.0-ML QD samples at room temperature, respectively. On the basis of the absorption and the emission spectra, we propose schematic energy-band diagrams for 1.8-ML and 2.0-ML InAs-QD/GaAs heterostructures.