http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : 배종성 (검색결과 124 건)
- 무료
- 기관 내 무료
- 유료
-
-
대칭 균형된 불완비 블록계획을 이용한 완전이면교배 실험
배종성,김공순 한국통계학회 1999 응용통계연구 Vol.12 No.1
이어진 블록계획 중에서 대칭 균형된 불완비 블록계획(Symmetrical Balanced Incomplete Block Design : SBIBD)을 이용하여 n-ary를 블록 완전이면교배(Complete Diallel Cross : CDC)계획을 설계하였다. 처리 수와 반복 수가 고정된 경우, 이렇게 설계된 계획이 균형된 불완비 블록계획을 이용해서 설계한 계획들 중에서 가장 효율이 높은 계획임을 보인다.
-
(M, S)-최적인 동반수 h($h\geq2$)을 갖는 가장 균형된 계획에 관한 연구
배종성 한국통계학회 1997 응용통계연구 Vol.10 No.1
In this paper, we show that the proper equi-replicate binary designs with h($h\geq2$)-concurrence most balanced designs are (M, S)-optimal. It is very difficult to construct with more than 3-concurrence designs, so we choose 3-concurrence most balanced designs out of the known PBIBD(3).
-
배종성,정중현,Chang Hoon Kim,Jang Hee Yoon,Jong Pil Kim,심규성,원미숙,박성균 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
Li-doped Gd2O3:Eu3+ luminescent thin films have been grown on Al2O3 (0001), GGG (111) and Si (100) substrates by using a pulsed-laser deposition technique. When the substrate is changed, the films show different microstructural and luminescent characteristics. Although both cubic and monoclinic phases are observed in Li-doped Gd2O3:Eu3+ films grown on Si (100) and GGG (111) substrates, an almost cubic phase exists in films grown on Al2O3 (0001) substrates. The PL intensity of the Li-doped Gd2O3:Eu3+ films is highly dependent on the crystallinity and the surface roughness of the films grown on various substrates. The photoluminescence intensity and the ratio IM(402)/IC(222) exhibit an inversely proportional tendency as a function of the oxygen pressure. The photoluminescence brightness of films grown on Al2O3 (0001) substrate indicate that Al2O3 (0001) is one of the most promising substrates for growth of high-quality Li-doped Gd2O3:Eu3+ thin-film red phosphors. The highest emission intensity was observed with Li-doped Gd2O3:Eu3+ films grown on Al2O3 (0001) substrates, whose brightness was increased by factors of 2.5 and 1.4 in comparison with those of the films grown on Si (100) and GGG (111) substrates, respectively.첰 Li-doped Gd2O3:Eu3+ luminescent thin films have been grown on Al2O3 (0001), GGG (111) and Si (100) substrates by using a pulsed-laser deposition technique. When the substrate is changed, the films show different microstructural and luminescent characteristics. Although both cubic and monoclinic phases are observed in Li-doped Gd2O3:Eu3+ films grown on Si (100) and GGG (111) substrates, an almost cubic phase exists in films grown on Al2O3 (0001) substrates. The PL intensity of the Li-doped Gd2O3:Eu3+ films is highly dependent on the crystallinity and the surface roughness of the films grown on various substrates. The photoluminescence intensity and the ratio IM(402)/IC(222) exhibit an inversely proportional tendency as a function of the oxygen pressure. The photoluminescence brightness of films grown on Al2O3 (0001) substrate indicate that Al2O3 (0001) is one of the most promising substrates for growth of high-quality Li-doped Gd2O3:Eu3+ thin-film red phosphors. The highest emission intensity was observed with Li-doped Gd2O3:Eu3+ films grown on Al2O3 (0001) substrates, whose brightness was increased by factors of 2.5 and 1.4 in comparison with those of the films grown on Si (100) and GGG (111) substrates, respectively
-
Enhanced Luminescent Characteristics of Y2−xGdxO3:Eu3+ Ceramic Phosphors by Li-Doping
배종성,심규성,문병기,Sung Boo Kim,정중현,이성수,김중환 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
The influence of lithium doping on the crystallization, the surface morphology, and the luminescent properties of Y2−xGdxO3:Eu3+ ceramic phosphors was investigated. The crystallinity, the surface morphology, and the photoluminescence (PL) of ceramics depended highly on the Li-doping and the Gd content. The relationship between the crystalline and morphological structures and the luminescent properties was studied, and Li+-doping was found to effectively enhanced not only the morphology but also the luminescent brightness of Y2−xGdxO3:Eu3+ ceramics. In particular, the incorporation of Gd into the Y2O3 lattice could induce remarkable increase in the PL. The highest emission intensity was observed with Li-doped Y1.35Gd0.60O3:Eu3+ ceramics whose brightness was increased by a factor of 1.6 in comparison with that of Li-doped Y2O3:Eu3+ ceramics.
-
-
-
배종성,박성균 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.4
The optical and the structural properties of Sr_2SiO_4:Eu^(3+) thin-film phosphors grown on MgO(100) were investigated using X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrometry. The thin films exhibited a high-temperature orthorhombic phase and a change of the preferred orientation from the (013) to the (121) direction as the oxygen partial pressure was increased. XPS data also revealed a variation in the O 1s chemical environment as the oxygen partial pressure increased. The PL intensity increased with increasing oxygen partial pressure and reached maximum intensity for the film grown at 150 mTorr which showed the largest surface roughness. The enhancement of the PL intensity could be related to surface roughness.
-
PLD 방법으로 증착된 Gd2O3:Eu3+ 형광체 박막의 형광 특성
배종성,정중현,이성수 한국물리학회 2004 새물리 Vol.48 No.1
Gd2O3:Eu3+ luminescent thin lms were been grown on Al2O3(0001) substrates by using pulsedlaserdeposition. The lms grown under dierent deposition conditions showed dierent microstructuraland luminescent characteristics. Both cubic and monoclinic crystalline structures were observedin Gd2O3:Eu3+ lms, and the crystalline structure of the lms highly depended on thedeposition conditions. The luminescence characteristics strongly depend on the crystalline structure and the surface morphology of the Gd2O3:Eu3+ lms.
-
ScienceON연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
