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배정운 대한금속·재료학회 2023 대한금속·재료학회지 Vol.61 No.1
Nowadays, high-density electronic devices and component mounting have gained popularity. Because of the heat generated from these devices, efficiency of the electronic parts is significantly lowered andlife time of these devices is considerably shortened. Therefore, it is very important to efficiently dissipate theheat generated from the device to extend product. In this study, a copper thick film was deposited using asputtering technique using plasma. In addition, graphene, a two-dimensional nanomaterial, was inserted inthe form of a sandwich structure between the deposited copper (Cu) layers of various thicknesses. Throughthis, a study was conducted to control the residual stress of thick copper foil deposited by sputtering. In thisstudy, the residual stress was measured according to the location where graphene was inserted, the treatmentmethod, and the transfer area. As a result, the highest residual stress reduction effect was observed whenthe transfer area of graphene was about 70%. Reduction of residual stress was observed by inserting grapheneinto the deposited copper thick film of various thicknesses. In addition, by increasing the number of layersof graphene inserted, changes in residual stress were observed.
배정운,염근영,Chang Hyun Jeong,Hyung Cheol Lee,I. Adesida,임종태 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.4
In order to obtain low-damage and vertical-etch profiles during etching of InP and In0.53Ga0.47As, we used inductively-coupled-plasma (ICP) etching with Cl2/N2 and Cl2/Ar gas chemistries at bias powers below 25 W. Vertical etch features were obtained at a gas mixture of Cl2 : N2 = 2 : 13 and a bias power of 25 W for both materials. In the etch process for InP using Cl2/N2 gas chemistry, PNx was formed on the sample surface. The vapor pressure of PNx was significantly lower than that of PClx as revealed by X-ray photoelectron spectroscopy (XPS) results. Therefore, through the sidewall passivation by PNx, the sidewall of InP was blocked from the etching species, and that resulted in a highly vertical profile at low bias power. On the other hand, in the etch process for InGaAs using Cl2/N2 gas chemistry, As-N bonds formed on the surface during the etching, and the sidewall passivation by As-N appeared to cause vertical etch profiles at low bias power.o
배정운,박기호,류정아 대한한의학원전학회 2022 대한한의학원전학회지 Vol.35 No.4
Objective : 鬱證에 대한 張介賓의 醫論과 治法을 고찰하고, 특징과 의의를 알아서 현대 임상에 참고하고자 하였다. Method : 『景岳全書』 「雜證模・鬱證」 원문, 鬱證 관련 『黃帝內經』의 원문 및 주석 그리고 金元四大家 醫書의 내용을 분석하고, 醫論의 발전과정을 살피며 비교・고찰하였다. Result : 張介賓은 情志로 인한 氣의 변화가 병리 상태를 초래한 기전에 주목해 鬱을 怒鬱, 思鬱, 憂鬱 세 가지로 분류하였다. 『素問・六元正紀大論篇』의 五鬱과 治法에 관해 王冰, 滑壽, 王安道의 주석을 대조하며 實證 위주로 보던 관점을 虛證으로 확장하였고, 瀉法 위주의 治法도 손상된 精氣를 회복시키는 補法으로 확장하였다. 怒鬱, 思鬱, 憂鬱을 虛實로 세분화해 神香散, 壽脾煎, 歸脾湯 등의 처방을 제시하고, 鬱證이 情志 즉 心에서 기인함으로 情을 직접 다스리는 移情變氣療法을 제시하였다. 張介賓은 鬱의 범주를 확장시킨 朱震亨의 의견을 채택하였으며 虛實의 관점에서는 李東垣과 가장 유사하였다. Conclusion : 張介賓 이전의 鬱證은 實證의 측면에서 언급되어왔던 반면 張介賓의 怒鬱, 思鬱, 憂鬱 중심 鬱證은 情志의 鬱에 주목하는 동시에 虛證의 鬱의 가능성을 제시했다는 점에서 기존의 관점이 확장되었다. 鬱을 다스리는 治法 또한 虛證에 대한 補法을 더하였으며, 情志 자체에 대한 치료적 접근이 필수적이게 되었다.