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Thermally - Induced Atomic Mixing at the Interface of Cu and Polyimide
고석근(Seok-Keun Koh),최원국(Won-Kook Cboi),송석균(Seok-Kyun Song),배국동(Kook D. Pae),정형진(Hyung-Jin Jung) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.3
Rate of mixing of Cu particles to polyimide substrate at interfaces under different thermal treatments was analyzed by Rutherford Backscattering Spectroscopy using 2.0 MeV He+ ions. The mixing rate was a function of annealing temperature and time, and was constant at a fixed temperature. The amount of mixing increased linearly with time and the mixing rate increased with temperature. The activation energy for interface mixing between Cu and polyimide was 2.6 kcal/mol. The X-ray studies showed the Cu(111) plane peak changed with annealing time at fixed temperature. The mixing of Cu to polyimide was explained with segmental motion of PI chain and with interaction between functional group of the chain and metal electron donor. The comparisons were made between the mixing induced by ion irradiation and by thermal treatment. The various factors affecting the interface mixing are discussed.