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전도성 E1 펄스에 대한 ZnO 바리스터의 동작특성 분석
방정주,허창수 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.3
본 논문에서는 산화아연형 바리스터의 전도성 EMP에 대한 응답 특성에 대하여 기술하였다. 바리스터의 응답특성 분석을 위해 MIL-STD-188-125-1 규격에 규정된 E1 펄스를 적용하였다. E1 펄스의 인가에 따른 바리스터의 잔류전류와 응답시간 등을 측정하였으며, 접속 도선의 길이에 따른 응답시간을 측정하였다. 시험결과로부터 인가되는 E1 펄스 전류의 크기가 증가할 경우 잔류전압도 증가하였다. 또한 접속선로의 길이가 증가할수록 동작응답시간이 증가하였으며 잔류전압의 크기도 증가하였다. 이 결과로, 전도성 EMP에 대한 보호방안으로 바리스터의 적용에 기초자료로 활용할 수 있을 것으로 판단된다. This work presents the response characteristics of a ZnO varistor to conductive EMP. An E1 pulse, standardized to MIL-STD-188-125-1, was applied to the varistors wherein the residual current and response times were measured with the applied E1 pulse current. Additionally, the response time was measured according to the length of the connection path. Consequently, the amplitude of the residual voltage through the ZnO varistors was increased with increasing amplitude of the applied E1 pulse current. As the length of the connection path increased, the operating response time and residual peak voltage also increased. These results indicate that the response characteristics of ZnO varistors can be applied to basic data to support the use of varistors as a protective measure against conductive EMP.
다양한 펄스 반복률에서의 NPN BJT (Bipolar Junction Transistor)의 파괴 특성에 관한 연구
방정주,허창수,이종원,Bang, Jeong-Ju,Huh, Chang-Su,Lee, Jong-Won 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.3
This paper examines the destruction behavior of NPN BJT (bipolar junction transistor) by repetition pulse. The injected pulse has a rise time of 1 ns and the maximum peak voltage of 2 kV. Pulse was injected into the base of transistor. Transistor was destroyed, current flows even when the base power is turned off. Cause the destruction of the transistor is damaged by heat. Breakdown voltage of the transistor is 975 V at single pulse, and repetition pulse is 525~575 V. Pulse repetition rate increases, the DT (destruction threshold) is reduced. Pulse Repetition rate is high, level of transistor destruction is more serious.
모노폴 안테나에 커플링되는 EMP에 의한 LNA(Low Noise Amplifier)의 민감성 분석
방정주(Jeong-Ju Bang),허창수(Chang-Su Huh) 대한전기학회 2019 전기학회논문지 Vol.68 No.4
In this paper, the output waveform of EMP coupled to 10 MHz monopole antenna analyzed by simulation, and the susceptibility of LNA(Low Noise Amplifier) was evaluated. The waveform of EMP coupled to the monopole antenna is a 10 MHz damped sinusoidal waveform, and the peak voltage is about 22 kV. The susceptibility of LNAs was evaluated using the 10 MHz damped sine wave generator. DFR(Destruction Failure Rate) was measured to investigate the susceptibility of LNA. The susceptibility level of LNA was assessed by voltage of damped sine wave. The voltage of destruction threshold is 71 V and 107.5 V respectively. The coupling voltage is higher than the destruction threshold of LNAs. Therefore, the communication system can be damaged by EMP. It is necessary to apply the protection device to the communication system. Based on these results, susceptibility of LNA can be applied to a basic data for applying the protection device to the communication system against EMP.
방정주(Jeong-Ju Bang),허창수(Chang-Su Huh),장태헌(Tae-Heon Jang) 대한전기학회 2019 전기학회논문지 Vol.68 No.11
This study has examined destruction effect on LNA(Low Noise Amplifier) by damped sine wave. DFR(Destruction Failure Rate) was measured to investigate the diagnostic of LNA test. Three kinds of damped sine wave were injected to input port of LNA module: 1 MHz, 10 MHz, and 100 MHz. The destruction level of LNA was assessed by damped sine wave voltage, and its DFR were observed. The destruction of LNA module has showed the degradation of amplification or loss of amplification function. As the frequency of damped sine wave increased, the destruction threshold voltage increased and destruction threshold energy decreased. Based on these results, the destruction effect of LNA can be used to protect the RF communication equipment from high power electromagnetics.
펄스 반복률에 의한 반도체 소자의 오동작 모드와 고장률에 관한 연구
박기훈,방정주,김륙완,허창수,Park, Ki-Hoon,Bang, Jeong-Ju,Kim, Ruck-Woan,Huh, Chang-Su 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.6
Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.