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Hot Wall epitaxy(HWE)법에 의한 $CdGa_2Se_4$ 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구
박창선,홍광준,Park, Chang-Sun,Hong, Kwang-Joon 한국결정성장학회 2007 韓國結晶成長學會誌 Vol.17 No.5
[ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$와 $C_{11}-exciton$ 봉우리임을 알았다. Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.
대학교 기숙사 건축에 있어서 장애인 시설의 실태와 장애인 학생의 만족도에 관한 연구
박창선,박기태,Park Chang-sun,Park Ki-taek 한국주거학회 2005 한국주거학회 논문집 Vol.16 No.3
The purpose of this study is to minimize physical obstacles for handicapped students in university dormitories. To carry out this study, we have surveyed 10 Universities in Korea. First we have studied the law and the theory of architectural planning and design guides those are related with handicapped people. And it was surveyed the existing state of the dormitories facilities and made a checklist. And the satisfaction about the facilities was questioned to the handicapped students who used those buildings. It is concluded that most of the universities which we have surveyed were equipped with good facilities for the general students but don't have regards for handicapped people at that time. As the result of the rate of the satisfaction, they are satisfied those facilities generally. As you can see the result of this research, the facilities in University are not very good for handicapped people in many points. So that kind of many facilities must be taken into consideration for handicapped people in the stage of architectural programming in the process of designing the dormitory building.
Hot Wall Epitaxy (HWE)법에 의한 ZnIn<sub>2</sub>S<sub>4</sub> 단결정 박막 성장과 열처리 효과
박창선,홍광준,Park, Chang-Sun,Hong, Kwang-Joon 한국재료학회 2008 한국재료학회지 Vol.18 No.6
Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T+489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.
박창선(Chang-Sun Park),홍기범(Suk-Jung Park),박숙정(Kee-Bum Hong),이호석(Ho-Suk Lee) 한국정보과학회 1998 한국정보과학회 학술발표논문집 Vol.25 No.2Ⅰ
현재 대학 전산처리 시스템은 COBOL 언어에 의한 처리방식에 의존하므로 전형방법의 다변화와 일련의 교육개혁 조치의 일환인 학사행정 전산화에 대하여 효율적이지 못한 엄두처리가 이루어지고 있다. 본 논문에서는 입학관리 운용에 대한 업무 처리 시간의 단축, 처리의 정확성 및 수행의 편리성을 제공하는 애플리케이션의 프로토타입을 개발하여 기존의 비능률적인 관리 및 처리를 개선하고자 한다. 전체적인 처리 기법은 서버의 오라클에 입력된 데이터에 대해 입학관리과의 정의된 양식에 따라 윈도우즈 환경하에서 각종 통계자료를 출력할 수 있도록 하였다. 이 시스템이 산출하여 제시하는 통계 자료는 입학현황, 지원현황, 성별현황, 수능점수별현황, 고교별현황, 수능최초(최종)평균점 현황 등 6가지 종류이다.
박창선(Chang Sun Park),배성미(Seong Mee Bae),양성희(Seong Hee Yang),황보신이(Shinn Hwangbo),홍경자(Kyung Ja Hong),장춘곤(Choon Gon Jang),이석용(Seok Yong Lee) 대한약학회 2002 약학회지 Vol.46 No.1
The elderly patients are the most frequent users of digoxin because of increased prevalence of the two primary indications for digoxin therapy; atrial fibrillation (AF) and congestive heart failure (CHF). This study was Performed to observe a variation in digoxin pharmacokinetic parameters in advancing age and changing kidney function, and to compare the measured clearance with the calculated clearance. The 123 drug monitoring records of inpatients who had achieved steady state concentration of digoxin at a tertiary hospital from April 1999 to October 2001 were reviewed. In advancing age, measured digoxin clearance, volume of distribution and creatinine clearance were reduced. Compared with the calculated digoxin clearance, the measured digoxin clearance was more reduced in patients without CHF Especial1y: in elderly patents without CHF the measured digoxin clearance was lower than the calculated digoxin clearance. In contrast to non-CHF patients the measured value was greater than the calculated value in all CHF patients. Findings from this study indicate that the calculated digoxin clearance in elderly patients without CHF substantially overestimated the true clearance. Thus, it appears that the use of calculated digoxin clearance to estimate serum digoxin concentration may result in underestimation of the true serum concentration in a number of elderly patients without CHF.
박창선(Chang Sun Park),성백섭(Back Sub Sung),김재열(Jae Yeol Kim) 한국생산제조학회 2011 한국생산제조학회지 Vol.20 No.2
This study examined the casting analysis of fuel pressure regulator of LPI vehicles. We aims to predict all the phenomenon accompanied by flow and solidification in die casting, and maximize productivity and quality through optimal casting design. As a result of comparing Types A and B of casting design, it was found that the number of overflow affected flow, flowspeed and solidification temperature. And there was a minute difference between solidification temperatures at thick section of the spare parts. Solidification began at temperatures of 624℃~630℃ but after the casting was completed, temperatures at the center of the parts were 600℃~614℃ Temperature of molten metal showed optimal flow at temperature of 680℃ It began to solidify around at 650℃ and to be cooled between 580℃~550℃in high speed. When the process was analysed through a computer simulation, it was found that hardness of regulators manufactured through Type B of overflow was above H<SUB>R</SUB>60.