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알카리 식각과 반응성 이온 식각을 이용한 결정질 실리콘 2단계 표면 조직화 공정
여인환,박주억,김준희,조해성,임동건,Yeo, In Hwan,Park, Ju Eok,Kim, Jun Hee,Cho, Hae Sung,Lim, Donggun 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.2
Lowering surface reflectance of silicon wafer by texturization is one of the most important processes to improve the efficiency of silicon solar cells. Generally, the texturing of crystalline silicon was carried out using alkaline solution. The average reflectance of this method was 11% at the wavelength between 400 and 1,000 nm. In this study, the wafers were first texturing by NaOH solution at $80^{\circ}C$ for 35 min. Then the wafers were texturing by $SF_6$ and $O_2$ plasma in RIE (Reactive Ion Etching). The average reflectance of two step texturing was reduced to below 5% at the wavelength between 400 and 1,000 nm.
스핀 도핑을 이용한 단결정 실리콘 태양전지 확산 공정 최적화
여인환,박주억,김준희,조해성,임동건,Yeo, In Hwan,Park, Ju Eok,Kim, Jun Hee,Cho, Hae Sung,Lim, Donggun 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.5
Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.
광수집 효율 극대화를 통한 결정질 실리콘 태양전지 효율 향상
임동건,박주억,김준희,조해성 韓國交通大學校 2013 한국교통대학교 논문집 Vol.48 No.-
Surface texturing of the silicon wafer is one of the most important ways for high efficiency solar cell. The texturing process reduces the surface reflection loss through photon trapping, so that short circuit current of the solar cell increases. In our report a relatively simple process for fast two-step texturing of p-type(100) CZ- silicon surface using metal-assisted chemical etching in aqueous hydrofluoric acid (HF) and hydrogen peroxide solution(H2O2) at room temperature. The wafers were first degreased by HCl(10%) for 3 min, followed by immersion in HF(10%) for 3 min. Then the wafers were first textured by KOH solution at 80℃ for 30 min. For the second texturing a thin layer of silver with a nominal thickness of 5nm was deposited on the surface by evaporation system. After this process the samples were etched in HF : H2O2 : H2O = 1:5:10 at room temperature for 80s - 240s. Due to the local catalytic of the Ag clusters, this treatment results in the nano-scale texturing on the surface. The average reflectance was less than 2.3% with two-step texturing. Cell results obtained in this study were up to 15.83% efficient for the best two-step metal-assisted chemical textured crystalline silicon solar cell.
결정질 실리콘 태양전지의 전극 종횡비 개선과 전극 간 간격이 효율에 미치는 영향 분석
김민영,박주억,조해성,김대성,변성균,임동건,Kim, Min Young,Park, Ju-Eok,Cho, Hae Sung,Kim, Dae Sung,Byeo, Seong Kyun,Lim, Donggun 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.4
The screen printed technique is one of the electrode forming technologies for crystalline silicon solar cell. It has the advantage that can raise the production efficiency due to simple process. The electrode technology is the core process because the electrode feature is given a substantial factor (for solar cell efficiency). In this paper, we tried to change conditions such as squeegee angle $55{\sim}75^{\circ}$, snap off 0.5~1.75 mm, printing pressure 0.6~0.3 MPa and 1.6~2.0 mm finger spacing. As a result, the screen printing process showed an improved performance with an increased height higher finger height. Optimization of fabrication process has achieved 17.48% efficiency at screen mesh of 1.6 mm finger spacing.
초음파를 이용한 실리콘 웨이퍼 표면절삭결함 제거 공정 최적화
여인환,조해성,박주억,김준희,임동건,양계준 忠州大學校 2012 한국교통대학교 논문집 Vol.47 No.-
SDR(Saw damage removal) process was performed in order to remove the surface defects and damage caused by wire sawing. Generally, the Saw Damage Removal(SDR) of crystalline silicon was carried out using alkaline solution at 80℃ for 10min. This method is difficult for thinner wafer to apply due to large amount of silicon loss. However, ultra sonic SDR can be effective with low silicon loss. P-type CZ-silicon wafer had an average thickness of 200 μm and a resistivity of 1.5 Ω-cm. The wafers were first degreased by HCl(10%) for 3min, followed by immersion in HF(10%) for 3min. The wafers were SDR by NaOH solution in ultra sonic. Then the wafers were texturing by NaOH solution at 80℃ for 35min. Lowering surface reflectance of Si wafer by texturization is one of the most important processes to improve the efficiency of Si solar cells. Reflectance of textured surface was reduced to below 11% at the wavelength between 400 and 1000 nm. This result achieves that it is possible to fabricate the thin silicon wafer.