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DR 부가시 Push-Push 유전체공진기 발진기 출력향상에 관한 분석
박승욱,김인석 慶熙大學校 레이저 工學硏究所 2002 레이저공학 Vol.13 No.-
In this paper, output power improvement of Push-Push FET DRO adding an identical DR has been analyzed using the electrical characteristics of DR located between two microstrip lines. In this analysis, the DR located between two microstrip lines locks the phase difference of two FET's output at 180˚ and improves the output power of Push-Push DRO. Since this effect can be used for correction the impedance difference between two FET's output circuit and the electrical length error of the power combiner at the output circuit of Push-push DRO, which may occur when fabricate the oscillator, the Push-Push DRO with an additional DR can be a useful structure for fabricating oscillator.
Push-Push FET DRO에 부가된 유전체공진기의 전력증강 역할에 관한 분석
박승욱,김인석 慶熙大學校 레이저 工學硏究所 2003 레이저공학 Vol.14 No.-
In this paper, the output power improvement of Push-Push FET DRO by adding the identical DR at the drain port, as one used in the gate port, has been theoretically investigated. The investigation shows that the DR located between two microstrip lines locks the phase difference of two FET's outputs at 180 degree and improves the output power of Push-Push FET DRO. Since this effect can be used for correcting the impedance difference between two FET's output circuits and the electrical length error of the power combiner at the output circuit of Push-Push DRO, which may occur when fabricate the oscillator, the oscillator with an additional DR can be useful structure for fabricating oscillator.