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Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
박래만,신재헌,Bosul Kim,Kyung Hyun Kim,정우석 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.4
A transparent non-volatile memory device was fabricated using silicon quantum dots in silicon nitride film as a gate insulator. A silicon quantum dots were grown in-situ in the film by plasma-enhanced chemical vapor deposition. The silicon quantum dot film had a high optical transmittance of over 95% at 550 nm with a thickness of 50 nm. A large hysteresis curve was observed in a current-voltage measurement. When we increased the voltage sweep range, electrons were charged into the silicon quantum dots because of the electrical n-type channel in an oxide thin film transistor.
Reactive Sputtering Process for CuIn_1-xGa_xSe_2 Thin Film Solar Cells
박래만,이호섭,김제하 한국전자통신연구원 2012 ETRI Journal Vol.34 No.5
CuIn_1-xGa_xSe_2 (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and (In_0.7Ga_0.3)_2 Se_3 targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.
Flower like Buffer Layer to Improve Efficiency of Submicron-Thick CuIn1-xGaxSe2 Solar Cells
박래만,조대형,이규석 한국전자통신연구원 2015 ETRI Journal Vol.37 No.6
In this article, a study of a flower like nanostructured CdS buffer layer for improving the performance of a submicron-thick CuIn1-xGaxSe2 (CIGS) solar cell (SC) is presented. Both its synthesis and properties are discussed in detail. The surface reflectance of the device is dramatically decreased. SCs with flower like nanostructured CdS buffer layers enhance short-circuit current density, fill factor, and open-circuit voltage. These enhancements contribute to an increase in power conversion efficiency of about 55% on average compared to SCs that don’t have a flower like nanostructured CdS buffer layer, despite them both having the same CIGS light absorbing layer.
박래만,신재헌,허철,김경현,김태엽,성건용,정태형,Park, N.M.,Shin, J.H.,Huh, C.,Kim, K.H.,Kim, T.Y.,Sung, G.Y.,Jeong, T.H 한국전자통신연구원 2005 전자통신동향분석 Vol.20 No.5
실리콘 포토닉스 기술은 차세대 실리콘 기술로서 optoelectronic integrated circuit을 위한 실리콘 기반 광기술에 대한 것이다. 본 고에서는 이러한 실리콘 포토닉스 기술을 이용한 단일 집적화에 있어서 응용과 문제점 및 연구개발 동향에 대해 알아본다. 특히, 세부 기술들에 대한 현재의 기술적 수준을 단일 집적화 측면에서 검토하였으며, 가장 큰 문제점으로 인식되는 실리콘 발광원의 국내외 기술 현황을 살펴보았다.